SM2318NSA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM2318NSA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 37 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT23

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SM2318NSA datasheet

 ..1. Size:257K  sino
 sm2318nsa.pdf pdf_icon

SM2318NSA

SM2318NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A, D RDS(ON)=40m (max.) @ VGS=10V S RDS(ON)=48m (max.) @ VGS=4.5V G RDS(ON)=85m (max.) @ VGS=2.5V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy

 8.1. Size:237K  taiwansemi
 tsm2318cx.pdf pdf_icon

SM2318NSA

TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa

 8.2. Size:422K  globaltech semi
 gsm2318a.pdf pdf_icon

SM2318NSA

GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:461K  globaltech semi
 gsm2318.pdf pdf_icon

SM2318NSA

GSM2318 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/2.8A,RDS(ON)=80m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta

MOSTRAR MÁS

Otros transistores... SM2302NSA, SM2304NSA, SM2306NSA, SM2308NSA, SM2310NSA, SM2312NSA, SM2314NSA, SM2316NSA, STP75NF75, SM3024NSF, SM3024NSU, SM3054NSU, SM3106NSF, SM3106NSU, SM3113NSU, SM3114NSU, SM3116NAF