SM2318NSA Specs and Replacement

Type Designator: SM2318NSA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT23

SM2318NSA substitution

- MOSFET ⓘ Cross-Reference Search

 

SM2318NSA datasheet

 ..1. Size:257K  sino
 sm2318nsa.pdf pdf_icon

SM2318NSA

SM2318NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A, D RDS(ON)=40m (max.) @ VGS=10V S RDS(ON)=48m (max.) @ VGS=4.5V G RDS(ON)=85m (max.) @ VGS=2.5V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy... See More ⇒

 8.1. Size:237K  taiwansemi
 tsm2318cx.pdf pdf_icon

SM2318NSA

TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa... See More ⇒

 8.2. Size:422K  globaltech semi
 gsm2318a.pdf pdf_icon

SM2318NSA

GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 8.3. Size:461K  globaltech semi
 gsm2318.pdf pdf_icon

SM2318NSA

GSM2318 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/2.8A,RDS(ON)=80m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta... See More ⇒

SHOW MORE

Detailed specifications: SM2302NSA, SM2304NSA, SM2306NSA, SM2308NSA, SM2310NSA, SM2312NSA, SM2314NSA, SM2316NSA, STP75NF75, SM3024NSF, SM3024NSU, SM3054NSU, SM3106NSF, SM3106NSU, SM3113NSU, SM3114NSU, SM3116NAF

Keywords - SM2318NSA MOSFET specs

 SM2318NSA cross reference

 SM2318NSA equivalent finder

 SM2318NSA pdf lookup

 SM2318NSA substitution

 SM2318NSA replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.