SM3114NSU Todos los transistores

 

SM3114NSU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM3114NSU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: TO252

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SM3114NSU datasheet

 ..1. Size:265K  sino
sm3114nsu.pdf pdf_icon

SM3114NSU

SM3114NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/75A, D RDS(ON)=4.2m (Max.) @ VGS=10V S RDS(ON)=6m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Information

 7.1. Size:261K  sino
sm3114nau.pdf pdf_icon

SM3114NSU

SM3114NAU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/75A, Drain 4 RDS(ON)= 3.6m (Max.) @ VGS=10V 3 Source 2 RDS(ON)= 5.2m (Max.) @ VGS=4.5V 1 Gate Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Order

 9.1. Size:173K  sino
sm3117nsu.pdf pdf_icon

SM3114NSU

SM3117NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, D RDS(ON)=7.2m (max.) @ VGS=10V S RDS(ON)=9.8m (max.) @ VGS=4.5V G Provide Excellent Qgd x Rds-on 100% UIS + Rg Tested Top View of TO-252-2 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Desktop Computer or S

 9.2. Size:551K  sino
sm3119nau.pdf pdf_icon

SM3114NSU

SM3119NAU N-Channel Enhancement Mode MOSFET Features Pin Description Drain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V 3 Source 2 RDS(ON)=14.5m (max.) @ VGS=4.5V 1 Gate Super High Dense Cell Design Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer or DC

Otros transistores... SM2316NSA , SM2318NSA , SM3024NSF , SM3024NSU , SM3054NSU , SM3106NSF , SM3106NSU , SM3113NSU , IRFP260 , SM3116NAF , SM3116NAFP , SM6018NSU , SM6018NSUB , SM6019NSF , SM6019NSU , SM4034NSKP , SM4336NSKP .

History: IRL60HS118 | APQ0CSN60A | IRL530NPBF | IRFZ44ELPBF | APQ0CSN60AJ | APQ09SN50A

 

 

 

 

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