SM3114NSU
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3114NSU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.5
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 440
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042
Ohm
Package:
TO252
SM3114NSU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3114NSU
Datasheet (PDF)
..1. Size:265K sino
sm3114nsu.pdf
SM3114NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/75A,D RDS(ON)=4.2m (Max.) @ VGS=10VS RDS(ON)=6m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
7.1. Size:261K sino
sm3114nau.pdf
SM3114NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/75A,Drain 4 RDS(ON)= 3.6m (Max.) @ VGS=10V3Source2 RDS(ON)= 5.2m (Max.) @ VGS=4.5V1Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrder
9.1. Size:173K sino
sm3117nsu.pdf
SM3117NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A,D RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VG Provide Excellent Qgd x Rds-on 100% UIS + Rg TestedTop View of TO-252-2 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orS
9.2. Size:551K sino
sm3119nau.pdf
SM3119NAU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V3Source2 RDS(ON)=14.5m (max.) @ VGS=4.5V1Gate Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC
9.3. Size:551K sino
sm3116nau.pdf
SM3116NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Chann
9.4. Size:261K sino
sm3113nsu.pdf
SM3113NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/85A,D RDS(ON)= 3m (Max.) @ VGS=10VS RDS(ON)= 4.6m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Informati
9.5. Size:149K sino
sm3116nsuc.pdf
SM3116NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A, RDS(ON)=5.7m (Max.) @ VGS=10V RDS(ON)=8m (Max.) @ VGS=4.5V SDG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-251S (RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS DC/DC Converters.N-Channel MOSFE
9.6. Size:160K sino
sm3116naf sm3116nafp.pdf
SM3116NAF/SM3116NAFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/58A, RDS(ON)= 5.5m (Max.) @ VGS=10V RDS(ON)= 7.8m (Max.) @ VGS=4.5VS S Reliable and Rugged D DG G Lead Free and Green Devices AvailableTop View of TO-220FPTop View of TO-220(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or
9.7. Size:265K sino
sm3116nbu.pdf
SM3116NBU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
9.8. Size:264K sino
sm3116nsu.pdf
SM3116NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=8m (Max.) @ VGS=4.5V Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
9.9. Size:266K sino
sm3115nsu.pdf
SM3115NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.4m (Max.) @ VGS=10VS RDS(ON)=7.3m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Informati
9.10. Size:155K sino
sm3117nsuc.pdf
SM3117NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A, RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VDG Provide Excellent Qgd x Rds-on Reliable and RuggedTop View of TO-251S Lead Free and Green Devices AvailableD(RoHS Compliant) 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS
9.11. Size:2124K huashuo
hsm3115.pdf
HSM3115 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.7 m gate charge for most of the synchronous buck converter applications. ID -14 A The HSM3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
9.12. Size:1430K cn vbsemi
sm3113nsuc.pdf
SM3113NSUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB
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