SM3017NSU Todos los transistores

 ..1. Size:270K  sino
 sm3017nsu.pdf

SM3017NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/68A, D RDS(ON)=7.2m (max.) @ VGS=10V S RDS(ON)=9.8m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D 100% EAS (UIS) test ESD Protection G Applications Power Management in Desktop Computer or DC/DC Converters. S N-Channe

 9.1. Size:410K  taiwansemi
 tsm301k12cq.pdf

TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY Pin Definition 1. Anode 6. Cathode VDS (V) RDS(on)(m ) ID (A) 2. NC 5. Gate 3. Drain 4. Source 94 @ VGS = -4.5V -2.8 -20 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY VR (V) VF (V) IF (A) 20 0.5 2 Block Diagram Features Configuration with MOSFET and L

 9.2. Size:174K  sino
 sm3016nsu.pdf

SM3016NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/75A, D RDS(ON)=5m (Max.) @ VGS=10V S RDS(ON)=6.9m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) ESD Protection D HBM ESD protection level pass 2KV 100% UIS + Rg Tested G Applications Power Management in Deskt

 9.3. Size:926K  globaltech semi
 gsm3016s.pdf

GSM3016S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=9m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltag

 9.4. Size:937K  globaltech semi
 gsm3019s.pdf

GSM3019S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=13m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

 9.5. Size:898K  globaltech semi
 gsm3015s.pdf

GSM3015S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=6.8m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) vo

 9.6. Size:800K  cn sps
 sm3012t9rl.pdf

SM3012T9RL 30V /36A Single N Power MOSFET N-Ch and P-Ch Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 21m 20A Advanced high cell density Trench -30V 28m -20A technology Description TO252 Pin Configuration The 3012 is the high performanc