SM3017NSU
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3017NSU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 68
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072
Ohm
Package:
TO252
SM3017NSU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3017NSU
Datasheet (PDF)
..1. Size:270K sino
sm3017nsu.pdf 
SM3017NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/68A,D RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant)D 100% EAS (UIS) test ESD ProtectionGApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channe
9.1. Size:410K taiwansemi
tsm301k12cq.pdf
TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY Pin Definition: 1. Anode 6. Cathode VDS (V) RDS(on)(m) ID (A) 2. NC 5. Gate 3. Drain 4. Source 94 @ VGS = -4.5V -2.8 -20 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY VR (V) VF (V) IF (A) 20 0.5 2 Block Diagram Features Configuration with MOSFET and L
9.2. Size:174K sino
sm3016nsu.pdf
SM3016NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/75A,D RDS(ON)=5m (Max.) @ VGS=10VS RDS(ON)=6.9m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant) ESD ProtectionD HBM ESD protection level pass 2KV 100% UIS + Rg TestedGApplications Power Management in Deskt
9.3. Size:926K globaltech semi
gsm3016s.pdf
GSM3016S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=9m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltag
9.4. Size:937K globaltech semi
gsm3019s.pdf
GSM3019S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=13m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta
9.5. Size:898K globaltech semi
gsm3015s.pdf
GSM3015S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=6.8m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) vo
9.6. Size:800K cn sps
sm3012t9rl.pdf
SM3012T9RL30V /36A Single N Power MOSFET N-Ch and P-Ch Fast Switching MOSFETsProduct Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 21m 20A Advanced high cell density Trench -30V 28m -20A technology Description TO252 Pin Configuration The 3012 is the high performanc
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