SM3023NSV Todos los transistores

 ..1. Size:276K  sino
 sm3023nsv.pdf

SM3023NSV N-Channel Enhancement Mode MOSFET Features Pin Description 30V/9.2A, RDS(ON)= 15m (max.) @ VGS=10V G RDS(ON)= 19.5m (max.) @ VGS=4.5V D S Reliable and Rugged Lead Free and Green Devices Available Top View SOT-223 (RoHS Compliant) D Applications G Switching Regulators. Switching Converters. S N-Channel MOSFET Ordering and Marking Information Package Code

 6.1. Size:268K  sino
 sm3023nsu.pdf

SM3023NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/49A, Drain 4 RDS(ON)= 11.5m (max.) @ VGS=10V 3 Source RDS(ON)= 17m (max.) @ VGS=4.5V 2 1 Reliable and Rugged Gate Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering

 9.1. Size:270K  sino
 sm3024nsu.pdf

SM3024NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/41A, D RDS(ON)=14m (max.) @ VGS=10V S RDS(ON)=20m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Information P

 9.2. Size:230K  sino
 sm3020psu.pdf

SM3020PSU P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-43A, D RDS(ON)= 18m (max.) @ VGS= -10V S RDS(ON)= 30m (max.) @ VGS= -4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-2 (RoHS Compliant) D Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D) G Applications Power Magagement in Desktop or DC/DC S Conver

 9.3. Size:253K  sino
 sm3024nsf.pdf

SM3024NSF N-Channel Enhancement Mode MOSFET Features Pin Description 30V/33A, RDS(ON)= 25m (max.) @ VGS=10V RDS(ON)= 34.5m (max.) @ VGS=4.5V S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D 100% UIS Tested Applications G Synchronous Rectification Motor Control High Current, High Speed Switching S N-Channel MO

 9.4. Size:770K  globaltech semi
 gsm3025s.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m @VGS=2.5V These devices are particularly suited for low Super high density cell design for e