SM3023NSV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SM3023NSV
Маркировка: 3023N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.25 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9.2 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19.5 nC
trⓘ - Время нарастания: 9.8 ns
Cossⓘ - Выходная емкость: 145 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: SOT223
SM3023NSV Datasheet (PDF)
sm3023nsv.pdf
SM3023NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/9.2A, RDS(ON)= 15m (max.) @ VGS=10VG RDS(ON)= 19.5m (max.) @ VGS=4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223(RoHS Compliant)DApplicationsG Switching Regulators. Switching Converters.SN-Channel MOSFETOrdering and Marking InformationPackage Code
sm3023nsu.pdf
SM3023NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/49A,Drain 4RDS(ON)= 11.5m (max.) @ VGS=10V3Source RDS(ON)= 17m (max.) @ VGS=4.5V 21 Reliable and Rugged Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering
sm3024nsu.pdf
SM3024NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/41A,DRDS(ON)=14m (max.) @ VGS=10VSRDS(ON)=20m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking InformationP
sm3020psu.pdf
SM3020PSU P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-43A, D RDS(ON)= 18m (max.) @ VGS= -10VS RDS(ON)= 30m (max.) @ VGS= -4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)D Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D)GApplications Power Magagement in Desktop or DC/DCSConver
sm3024nsf.pdf
SM3024NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/33A, RDS(ON)= 25m (max.) @ VGS=10V RDS(ON)= 34.5m (max.) @ VGS=4.5VSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)D 100% UIS TestedApplicationsG Synchronous Rectification Motor Control High Current, High Speed SwitchingSN-Channel MO
gsm3025s.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Super high density cell design for e
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918