SM2604NSC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM2604NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SRDS(ON)= 24m(max.) @ VGS=10VDDGRDS(ON)= 32.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

SM2607CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/5A,D2 RDS(ON)=38m(max.) @ VGS=4.5VS1D1G2 RDS(ON)=54m(max.) @ VGS=2.5VS2G1 RDS(ON)=85m(max.) @ VGS=1.8V P-ChannelTop View of SOT-23-6 -20V/-3.3A, RDS(ON)=85m(max.) @ VGS=-4.5V(4)D2(6)D1RDS(ON)=120m(max.) @ VGS=-2.5VRDS(ON)=210m(max.)

SM2603PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.3A,SRDS(ON)= 48m (max.) @ VGS=-4.5VDDRDS(ON)= 68m (max.) @ VGS=-2.5VGDRDS(ON)= 100m (max.) @ VGS=-1.8VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,Portable Equip

SM2602NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.2A,SDRDS(ON)= 24m (max.) @ VGS=4.5VDGRDS(ON)= 32m (max.) @ VGS=2.5VDD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystem

SM2601PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.3A ,SDRDS(ON)=26m (Max.) @ VGS=-4.5VDGDRDS(ON)=38m (Max.) @ VGS=-2.5VDRDS(ON)=58m (Max.) @ VGS=-1.8VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Computer,

SM2608NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SDRDS(ON)= 17m(max.) @ VGS=10VDGRDS(ON)= 21.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS

SM2605PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-7.5A,SDRDS(ON) = 30m(max.) @ VGS =-10VDGRDS(ON) = 45m(max.) @ VGS =-4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powe

SM2609PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, SDRDS(ON) = 85m(max.) @ VGS =-10VDGDRDS(ON) = 135m(max.) @ VGS =-4.5VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powere

CSM260 N PD TC=25 250 W 2.0 W/ ID VGS=10V,TC=25 35 A ID VGS=10V,TC=100 28 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.

SSM2603GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SBVDSS -20VSimple Drive Requirement DDRDS(ON) 65mSmall Package Outline Surface Mount Device GID -5.0ADSOT-26 DDESCRIPTION DAdvanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. GThe

SSM2605GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SFast Switching Characteristic BVDSS -30VDLower Gate Charge D RDS(ON) 80mSmall Footprint & Low Profile Package G ID - 4ADSOT-26DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d

SSM2602GYN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20VSLower on-resistance DRDS(ON) 34mDSurface mount package ID 6.3ARoHS Compliant GDSOT-26 DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness

SSM2602YN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSDLow on-resistance RDS(ON) 34mDSurface mount package ID 5.3AGDSOT-26DDescriptionThese Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistanceDin an extremely efficient and cost-effective device.The SOT-26 package

SSM2603YP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -20VSDSmall package outline R 65mDS(ON)DSurface-mount device ID - 4.2AGDSOT-26DDescriptionDThese power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistancein an extremely efficient and cost-effective device.GThe SOT-2