SM2604NSC Datasheet. Equivalente

 ..1. Size:159K  sino
 sm2604nsc.pdf

SM2604NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/7.4A, S RDS(ON)= 24m (max.) @ VGS=10V D D G RDS(ON)= 32.5m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered S

 8.1. Size:981K  globaltech semi
 gsm2604.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.1. Size:203K  sino
 sm2607csc.pdf

SM2607CSC Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/5A, D2 RDS(ON)=38m (max.) @ VGS=4.5V S1 D1 G2 RDS(ON)=54m (max.) @ VGS=2.5V S2 G1 RDS(ON)=85m (max.) @ VGS=1.8V P-Channel Top View of SOT-23-6 -20V/-3.3A, RDS(ON)=85m (max.) @ VGS=-4.5V (4)D2 (6)D1 RDS(ON)=120m (max.) @ VGS=-2.5V RDS(ON)=210m (max.)

 9.2. Size:305K  sino
 sm2603psc.pdf

SM2603PSC P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.3A, S RDS(ON)= 48m (max.) @ VGS=-4.5V D D RDS(ON)= 68m (max.) @ VGS=-2.5V G D RDS(ON)= 100m (max.) @ VGS=-1.8V D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, Portable Equip

 9.3. Size:303K  sino
 sm2602nsc.pdf

SM2602NSC N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6.2A, S D RDS(ON)= 24m (max.) @ VGS=4.5V D G RDS(ON)= 32m (max.) @ VGS=2.5V D D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powered System

 9.4. Size:162K  sino
 sm2601psc.pdf

SM2601PSC P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-7.3A , S D RDS(ON)=26m (Max.) @ VGS=-4.5V D G D RDS(ON)=38m (Max.) @ VGS=-2.5V D RDS(ON)=58m (Max.) @ VGS=-1.8V Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DD DD Applications (3)G Power Management in Notebook Computer,

 9.5. Size:160K  sino
 sm2608nsc.pdf

SM2608NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/7.4A, S D RDS(ON)= 17m (max.) @ VGS=10V D G RDS(ON)= 21.5m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered S

 9.6. Size:161K  sino
 sm2605psc.pdf

SM2605PSC P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-7.5A, S D RDS(ON) = 30m (max.) @ VGS =-10V D G RDS(ON) = 45m (max.) @ VGS =-4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powe

 9.7. Size:161K  sino
 sm2609psc.pdf

SM2609PSC P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, S D RDS(ON) = 85m (max.) @ VGS =-10V D G D RDS(ON) = 135m (max.) @ VGS =-4.5V D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powere

 9.8. Size:126K  china
 csm260.pdf

CSM260 N PD TC=25 250 W 2.0 W/ ID VGS=10V,TC=25 35 A ID VGS=10V,TC=100 28 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.

 9.9. Size:215K  silicon standard
 ssm2603gy.pdf

SSM2603GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S BVDSS -20V Simple Drive Requirement D D RDS(ON) 65m Small Package Outline Surface Mount Device G ID -5.0A D SOT-26 D DESCRIPTION D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G The

 9.10. Size:207K  silicon standard
 ssm2605gy.pdf

SSM2605GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S Fast Switching Characteristic BVDSS -30V D Lower Gate Charge D RDS(ON) 80m Small Footprint & Low Profile Package G ID - 4A D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d

 9.11. Size:204K  silicon standard
 ssm2602gy.pdf

SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20V S Lower on-resistance D RDS(ON) 34m D Surface mount package ID 6.3A RoHS Compliant G D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness

 9.12. Size:169K  silicon standard
 ssm2602y.pdf

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive BVDSS 20V S D Low on-resistance RDS(ON) 34m D Surface mount package ID 5.3A G D SOT-26 D Description These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance D in an extremely efficient and cost-effective device. The SOT-26 package

 9.13. Size:152K  silicon standard
 ssm2603y.pdf

SSM2603Y P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -20V S D Small package outline R 65m DS(ON) D Surface-mount device ID - 4.2A G D SOT-26 D Description D These power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. G The SOT-2