SM2604NSC - описание и поиск аналогов

SM2604NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/7.4A, S RDS(ON)= 24m (max.) @ VGS=10V D D G RDS(ON)= 32.5m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered S

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

SM2607CSC Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/5A, D2 RDS(ON)=38m (max.) @ VGS=4.5V S1 D1 G2 RDS(ON)=54m (max.) @ VGS=2.5V S2 G1 RDS(ON)=85m (max.) @ VGS=1.8V P-Channel Top View of SOT-23-6 -20V/-3.3A, RDS(ON)=85m (max.) @ VGS=-4.5V (4)D2 (6)D1 RDS(ON)=120m (max.) @ VGS=-2.5V RDS(ON)=210m (max.)

SM2603PSC P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.3A, S RDS(ON)= 48m (max.) @ VGS=-4.5V D D RDS(ON)= 68m (max.) @ VGS=-2.5V G D RDS(ON)= 100m (max.) @ VGS=-1.8V D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, Portable Equip

SM2602NSC N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6.2A, S D RDS(ON)= 24m (max.) @ VGS=4.5V D G RDS(ON)= 32m (max.) @ VGS=2.5V D D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powered System

SM2601PSC P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-7.3A , S D RDS(ON)=26m (Max.) @ VGS=-4.5V D G D RDS(ON)=38m (Max.) @ VGS=-2.5V D RDS(ON)=58m (Max.) @ VGS=-1.8V Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DD DD Applications (3)G Power Management in Notebook Computer,

SM2608NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/7.4A, S D RDS(ON)= 17m (max.) @ VGS=10V D G RDS(ON)= 21.5m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered S

SM2605PSC P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-7.5A, S D RDS(ON) = 30m (max.) @ VGS =-10V D G RDS(ON) = 45m (max.) @ VGS =-4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powe

SM2609PSC P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, S D RDS(ON) = 85m (max.) @ VGS =-10V D G D RDS(ON) = 135m (max.) @ VGS =-4.5V D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powere

CSM260 N PD TC=25 250 W 2.0 W/ ID VGS=10V,TC=25 35 A ID VGS=10V,TC=100 28 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.

SSM2603GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S BVDSS -20V Simple Drive Requirement D D RDS(ON) 65m Small Package Outline Surface Mount Device G ID -5.0A D SOT-26 D DESCRIPTION D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G The

SSM2605GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S Fast Switching Characteristic BVDSS -30V D Lower Gate Charge D RDS(ON) 80m Small Footprint & Low Profile Package G ID - 4A D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d

SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20V S Lower on-resistance D RDS(ON) 34m D Surface mount package ID 6.3A RoHS Compliant G D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive BVDSS 20V S D Low on-resistance RDS(ON) 34m D Surface mount package ID 5.3A G D SOT-26 D Description These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance D in an extremely efficient and cost-effective device. The SOT-26 package

SSM2603Y P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -20V S D Small package outline R 65m DS(ON) D Surface-mount device ID - 4.2A G D SOT-26 D Description D These power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. G The SOT-2