SM2610NSC Todos los transistores

 

SM2610NSC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM2610NSC

Código: C10*

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9.5 nS

Conductancia de drenaje-sustrato (Cd): 93 pF

Resistencia drenaje-fuente RDS(on): 0.021 Ohm

Empaquetado / Estuche: SOT23-6

Búsqueda de reemplazo de MOSFET SM2610NSC

 

SM2610NSC Datasheet (PDF)

1.1. sm2610nsc.pdf Size:160K _sino

SM2610NSC
SM2610NSC

SM2610NSC ® N-Channel Enhancement Mode MOSFET Features Pin Description 30V/6.6A, S D RDS(ON)= 21mΩ(max.) @ VGS=10V D G RDS(ON)= 27mΩ(max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered Sys

5.1. tsm2611edcx6.pdf Size:355K _update_mosfet

SM2610NSC
SM2610NSC

 TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(mΩ) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On resistance ● ESD Protected HBM

5.2. tsm2611edcx6.pdf Size:355K _taiwansemi

SM2610NSC
SM2610NSC

 TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(mΩ) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On resistance ● ESD Protected HBM

 5.3. sm2617psc sm2621psc.pdf Size:162K _sino

SM2610NSC
SM2610NSC

SM2621PSC ® P-Channel Enhancement Mode MOSFET Features Pin Description S • -30V/-5.1A , D D G RDS(ON)= 54mΩ (Max.) @ VGS=-10V D RDS(ON)= 65mΩ (Max.) @ VGS=-4.5V D RDS(ON)= 92mΩ (Max.) @ VGS=-2.5V Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DD DD Applications (3)G Power Management in Notebook Comput

5.4. sm2613psc.pdf Size:263K _sino

SM2610NSC
SM2610NSC

SM2613PSC ® P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-5.6A , S D RDS(ON)= 45m (Max.) @ VGS=-4.5V D G RDS(ON)= 66m (Max.) @ VGS=-2.5V D D RDS(ON)=104m (Max.) @ VGS=-1.8V 100% UIS + Rg Tested Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) Applications (3)G Power Management in Noteb

 5.5. sm2612nsc.pdf Size:161K _sino

SM2610NSC
SM2610NSC

SM2612NSC ® N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.5A, S D RDS(ON)= 26.5mΩ(max.) @ VGS=10V D G RDS(ON)= 35mΩ(max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DDDD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered Sy

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