SM2610NSC - аналоги, параметры транзистора - Справочник транзисторов

SM2610NSC даташит

..1. Size:160K sino
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SM2610NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/6.6A, S D RDS(ON)= 21m (max.) @ VGS=10V D G RDS(ON)= 27m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered Sys

9.1. Size:355K taiwansemi
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TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m ) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM

9.2. Size:161K sino
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SM2612NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.5A, S D RDS(ON)= 26.5m (max.) @ VGS=10V D G RDS(ON)= 35m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DDDD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered Sy

9.3. Size:162K sino
sm2617psc sm2621psc.pdf pdf_icon

SM2621PSC P-Channel Enhancement Mode MOSFET Features Pin Description S -30V/-5.1A , D D G RDS(ON)= 54m (Max.) @ VGS=-10V D RDS(ON)= 65m (Max.) @ VGS=-4.5V D RDS(ON)= 92m (Max.) @ VGS=-2.5V Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DD DD Applications (3)G Power Management in Notebook Comput