SM3117NSU Todos los transistores

 

SM3117NSU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM3117NSU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

SM3117NSU Datasheet (PDF)

 ..1. Size:173K  sino
sm3117nsu.pdf pdf_icon

SM3117NSU

SM3117NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A,D RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VG Provide Excellent Qgd x Rds-on 100% UIS + Rg TestedTop View of TO-252-2 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orS

 0.1. Size:155K  sino
sm3117nsuc.pdf pdf_icon

SM3117NSU

SM3117NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A, RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VDG Provide Excellent Qgd x Rds-on Reliable and RuggedTop View of TO-251S Lead Free and Green Devices AvailableD(RoHS Compliant) 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS

 9.1. Size:551K  sino
sm3119nau.pdf pdf_icon

SM3117NSU

SM3119NAU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V3Source2 RDS(ON)=14.5m (max.) @ VGS=4.5V1Gate Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC

 9.2. Size:551K  sino
sm3116nau.pdf pdf_icon

SM3117NSU

SM3116NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Chann

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FMP30N60S1 | BLF6G27-100 | SMC3407 | HCFL60R190

 

 
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