SM3117NSU
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SM3117NSU
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 50
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 12
ns
Cossⓘ - Выходная емкость: 190
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0072
Ohm
Тип корпуса:
TO252
- подбор MOSFET транзистора по параметрам
SM3117NSU
Datasheet (PDF)
..1. Size:173K sino
sm3117nsu.pdf 

SM3117NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A,D RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VG Provide Excellent Qgd x Rds-on 100% UIS + Rg TestedTop View of TO-252-2 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orS
0.1. Size:155K sino
sm3117nsuc.pdf 

SM3117NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A, RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VDG Provide Excellent Qgd x Rds-on Reliable and RuggedTop View of TO-251S Lead Free and Green Devices AvailableD(RoHS Compliant) 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS
9.1. Size:551K sino
sm3119nau.pdf 

SM3119NAU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V3Source2 RDS(ON)=14.5m (max.) @ VGS=4.5V1Gate Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC
9.2. Size:551K sino
sm3116nau.pdf 

SM3116NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Chann
9.3. Size:265K sino
sm3114nsu.pdf 

SM3114NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/75A,D RDS(ON)=4.2m (Max.) @ VGS=10VS RDS(ON)=6m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
9.4. Size:261K sino
sm3113nsu.pdf 

SM3113NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/85A,D RDS(ON)= 3m (Max.) @ VGS=10VS RDS(ON)= 4.6m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Informati
9.5. Size:149K sino
sm3116nsuc.pdf 

SM3116NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A, RDS(ON)=5.7m (Max.) @ VGS=10V RDS(ON)=8m (Max.) @ VGS=4.5V SDG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-251S (RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS DC/DC Converters.N-Channel MOSFE
9.6. Size:160K sino
sm3116naf sm3116nafp.pdf 

SM3116NAF/SM3116NAFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/58A, RDS(ON)= 5.5m (Max.) @ VGS=10V RDS(ON)= 7.8m (Max.) @ VGS=4.5VS S Reliable and Rugged D DG G Lead Free and Green Devices AvailableTop View of TO-220FPTop View of TO-220(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or
9.7. Size:265K sino
sm3116nbu.pdf 

SM3116NBU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
9.8. Size:264K sino
sm3116nsu.pdf 

SM3116NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=8m (Max.) @ VGS=4.5V Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
9.9. Size:261K sino
sm3114nau.pdf 

SM3114NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/75A,Drain 4 RDS(ON)= 3.6m (Max.) @ VGS=10V3Source2 RDS(ON)= 5.2m (Max.) @ VGS=4.5V1Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrder
9.10. Size:266K sino
sm3115nsu.pdf 

SM3115NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.4m (Max.) @ VGS=10VS RDS(ON)=7.3m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Informati
9.11. Size:2124K huashuo
hsm3115.pdf 

HSM3115 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.7 m gate charge for most of the synchronous buck converter applications. ID -14 A The HSM3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
9.12. Size:1430K cn vbsemi
sm3113nsuc.pdf 

SM3113NSUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB
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History: IRF7526D1
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