SM3402NSQG Todos los transistores

 

SM3402NSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM3402NSQG
   Código: SM3402
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 378 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: DFN3X3D-8

 Búsqueda de reemplazo de MOSFET SM3402NSQG

 

SM3402NSQG Datasheet (PDF)

 ..1. Size:151K  sino
sm3402nsqg.pdf

SM3402NSQG
SM3402NSQG

SM3402NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A,DRDS(ON) =4.6m(max.) @ VGS =10VRDS(ON) =6.2m(max.) @ VGS =4.5VSGSS ESD ProtectedDFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested(5,6,7,8)DDDD Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)(4) GApplications Power Management in Noteb

 8.1. Size:453K  globaltech semi
gsm3402a.pdf

SM3402NSQG
SM3402NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=87m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Super high density cell design for

 8.2. Size:1144K  globaltech semi
gsm3402.pdf

SM3402NSQG
SM3402NSQG

GSM3402 GSM3402 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402, N-Channel enhancement mode 30V/4.0A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=80m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=100m@VGS=2.5V gate charge. These devices are particularly Super high density cell de

 8.3. Size:771K  cn sps
sm3402srl.pdf

SM3402NSQG
SM3402NSQG

SM3402SRL30V /4A Single N Power MOSFET B N03B N 30V /4A Single N Power MOSFET 4N03BGeneral Description 30 VV DS30V /4A Single N Power MOSFET 45.5 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 71.5 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 4 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM340

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: CHT2302GP | IXTV250N075TS | SGB100N042

 

 
Back to Top

 


History: CHT2302GP | IXTV250N075TS | SGB100N042

SM3402NSQG
  SM3402NSQG
  SM3402NSQG
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top