SM3402NSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM3402NSQG
Código: SM3402
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 20 nC
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 378 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Paquete / Cubierta: DFN3X3D-8
Búsqueda de reemplazo de MOSFET SM3402NSQG
SM3402NSQG Datasheet (PDF)
sm3402nsqg.pdf
SM3402NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A,DRDS(ON) =4.6m(max.) @ VGS =10VRDS(ON) =6.2m(max.) @ VGS =4.5VSGSS ESD ProtectedDFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested(5,6,7,8)DDDD Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)(4) GApplications Power Management in Noteb
gsm3402a.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=87m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Super high density cell design for
gsm3402.pdf
GSM3402 GSM3402 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402, N-Channel enhancement mode 30V/4.0A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=80m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=100m@VGS=2.5V gate charge. These devices are particularly Super high density cell de
sm3402srl.pdf
SM3402SRL30V /4A Single N Power MOSFET B N03B N 30V /4A Single N Power MOSFET 4N03BGeneral Description 30 VV DS30V /4A Single N Power MOSFET 45.5 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 71.5 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 4 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM340
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: CHT2302GP | IXTV250N075TS | SGB100N042
History: CHT2302GP | IXTV250N075TS | SGB100N042
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