SM3402NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A,DRDS(ON) =4.6m(max.) @ VGS =10VRDS(ON) =6.2m(max.) @ VGS =4.5VSGSS ESD ProtectedDFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested(5,6,7,8)DDDD Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)(4) GApplications Power Management in Noteb

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=87m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Super high density cell design for

GSM3402 GSM3402 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402, N-Channel enhancement mode 30V/4.0A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=80m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=100m@VGS=2.5V gate charge. These devices are particularly Super high density cell de

SM3402SRL30V /4A Single N Power MOSFET B N03B N 30V /4A Single N Power MOSFET 4N03BGeneral Description 30 VV DS30V /4A Single N Power MOSFET 45.5 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 71.5 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 4 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM340