SM3424NHQA Todos los transistores

 

SM3424NHQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM3424NHQA
   Código: SM3424N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 77 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 28 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: DFN3.3X3.3A-8
 

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SM3424NHQA Datasheet (PDF)

 ..1. Size:253K  sino
 sm3424nhqa.pdf pdf_icon

SM3424NHQA

SM3424NHQA N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/77A, DDD RDS(ON)= 3.4m (Max.) @ VGS=10V RDS(ON)= 5.1m (Max.) @ VGS=4.5VGSSS Lower Qg and Qgd for high-speed switching Lower RDS(ON) to Minimize Conduction LossesDFN3.3x3.3A-8_EP ESD Protection(5,6,7,8) 100% UIS + Rg TestedDDDD Reliable and Rugged Lead Free and Green Devices Av

 8.1. Size:203K  taiwansemi
 tsm3424cx6.pdf pdf_icon

SM3424NHQA

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

 8.2. Size:772K  globaltech semi
 gsm3424a.pdf pdf_icon

SM3424NHQA

GSM3424A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=95m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/1.5A,RDS(ON)=265m@VGS=4.5V Super high density cell design for extremely These devices are

 8.3. Size:883K  globaltech semi
 gsm3424.pdf pdf_icon

SM3424NHQA

GSM3424 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V Super high density cell design for extremely These devices are pa

MOSTRAR MÁS

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