SM3424NHQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM3424NHQA N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/77A, DDD RDS(ON)= 3.4m (Max.) @ VGS=10V RDS(ON)= 5.1m (Max.) @ VGS=4.5VGSSS Lower Qg and Qgd for high-speed switching Lower RDS(ON) to Minimize Conduction LossesDFN3.3x3.3A-8_EP ESD Protection(5,6,7,8) 100% UIS + Rg TestedDDDD Reliable and Rugged Lead Free and Green Devices Av

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

GSM3424A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=95m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/1.5A,RDS(ON)=265m@VGS=4.5V Super high density cell design for extremely These devices are

GSM3424 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V Super high density cell design for extremely These devices are pa