SM3433NHQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3433NHQG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9.3 nS
   Cossⓘ - Capacitancia de salida: 790 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: DFN3.3X3.3B-8

Búsqueda de reemplazo de MOSFET SM3433NHQG

SM3433NHQG Datasheet (PDF)

..1. Size:173K sino
sm3433nhqg.pdf

SM3433NHQGN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/50A, DDDDRDS(ON) = 2.5m(max.) @ VGS =10VRDS(ON) = 4.1m(max.) @ VGS =4.5VGSSS 100% UIS + Rg Tested Avalanche Rated DFN3.3x3.3-8(Saw-EP) Reliable and Rugged(5,6,7,8) Lower Qg and Qgd for high-speed switchingD D DD Lower RDS(ON) to Minimize Conduction Losses Lead Free and Green

8.1. Size:116K taiwansemi
tsm3433cx6 tsm3433 a07.pdf

9.1. Size:253K sino
sm3439nhqa.pdf

SM3439NHQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 40V/43A,RDS(ON) = 9.5m (max.) @ VGS =10VGSSRDS(ON) = 13.5m (max.) @ VGS =4.5VS ESD protectionDFN3.3x3.3A-8_EP Lower Qg and Qgd for high-speed switching Lead Free and Green Devices Available(5,6,7,8)DDDD (RoHS Compliant)Applications(4) G Power Management in Notebook Computer,

9.2. Size:895K globaltech semi
gsm3436.pdf

GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m@VGS=2.5V Super high density cell design for extremely These devices are partic

9.3. Size:1009K globaltech semi
gsm3434w.pdf

GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex

9.4. Size:895K globaltech semi
gsm3432.pdf

GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V Super high density cell design for extremely These devices are partic

9.5. Size:842K globaltech semi
gsm3430w.pdf

GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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