SM3433NHQG Specs and Replacement
Type Designator: SM3433NHQG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.3 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: DFN3.3X3.3B-8
SM3433NHQG substitution
SM3433NHQG datasheet
sm3433nhqg.pdf
SM3433NHQG N-Channel Enhancement Mode MOSFET Features Pin Description 40V/50A, D D D D RDS(ON) = 2.5m (max.) @ VGS =10V RDS(ON) = 4.1m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested Avalanche Rated DFN3.3x3.3-8(Saw-EP) Reliable and Rugged (5,6,7,8) Lower Qg and Qgd for high-speed switching D D DD Lower RDS(ON) to Minimize Conduction Losses Lead Free and Green... See More ⇒
sm3439nhqa.pdf
SM3439NHQA N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 40V/43A, RDS(ON) = 9.5m (max.) @ VGS =10V G S S RDS(ON) = 13.5m (max.) @ VGS =4.5V S ESD protection DFN3.3x3.3A-8_EP Lower Qg and Qgd for high-speed switching Lead Free and Green Devices Available (5,6,7,8) DDDD (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,... See More ⇒
gsm3436.pdf
GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m @VGS=2.5V Super high density cell design for extremely These devices are partic... See More ⇒
Detailed specifications: SM3402NSQG , SM3404NSQG , SM3405NSQG , SM3406NSQG , SM3408NSQG , SM3412NHQG , SM3424NHQA , SM3425NHQA , BS170 , SM3439NHQA , SM6128NSK , SM6128NSKP , SM6128NSQG , SM6128NSU , SM6128NSUB , SM6129NSKP , SM6129NSU .
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