SM3433NHQG
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3433NHQG
Marking Code: SM3433N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.3
nC
trⓘ - Rise Time: 9.3
nS
Cossⓘ -
Output Capacitance: 790
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026
Ohm
Package: DFN3.3X3.3B-8
SM3433NHQG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3433NHQG
Datasheet (PDF)
..1. Size:173K sino
sm3433nhqg.pdf 
SM3433NHQGN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/50A, DDDDRDS(ON) = 2.5m(max.) @ VGS =10VRDS(ON) = 4.1m(max.) @ VGS =4.5VGSSS 100% UIS + Rg Tested Avalanche Rated DFN3.3x3.3-8(Saw-EP) Reliable and Rugged(5,6,7,8) Lower Qg and Qgd for high-speed switchingD D DD Lower RDS(ON) to Minimize Conduction Losses Lead Free and Green
9.1. Size:253K sino
sm3439nhqa.pdf
SM3439NHQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 40V/43A,RDS(ON) = 9.5m (max.) @ VGS =10VGSSRDS(ON) = 13.5m (max.) @ VGS =4.5VS ESD protectionDFN3.3x3.3A-8_EP Lower Qg and Qgd for high-speed switching Lead Free and Green Devices Available(5,6,7,8)DDDD (RoHS Compliant)Applications(4) G Power Management in Notebook Computer,
9.2. Size:895K globaltech semi
gsm3436.pdf
GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m@VGS=2.5V Super high density cell design for extremely These devices are partic
9.3. Size:1009K globaltech semi
gsm3434w.pdf
GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex
9.4. Size:895K globaltech semi
gsm3432.pdf
GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V Super high density cell design for extremely These devices are partic
9.5. Size:842K globaltech semi
gsm3430w.pdf
GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
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