SM3439NHQA Todos los transistores

 ..1. Size:253K  sino
 sm3439nhqa.pdf

SM3439NHQA N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 40V/43A, RDS(ON) = 9.5m (max.) @ VGS =10V G S S RDS(ON) = 13.5m (max.) @ VGS =4.5V S ESD protection DFN3.3x3.3A-8_EP Lower Qg and Qgd for high-speed switching Lead Free and Green Devices Available (5,6,7,8) DDDD (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,

 9.1. Size:116K  taiwansemi
 tsm3433cx6 tsm3433 a07.pdf

 9.2. Size:173K  sino
 sm3433nhqg.pdf

SM3433NHQG N-Channel Enhancement Mode MOSFET Features Pin Description 40V/50A, D D D D RDS(ON) = 2.5m (max.) @ VGS =10V RDS(ON) = 4.1m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested Avalanche Rated DFN3.3x3.3-8(Saw-EP) Reliable and Rugged (5,6,7,8) Lower Qg and Qgd for high-speed switching D D DD Lower RDS(ON) to Minimize Conduction Losses Lead Free and Green

 9.3. Size:895K  globaltech semi
 gsm3436.pdf

GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m @VGS=2.5V Super high density cell design for extremely These devices are partic

 9.4. Size:1009K  globaltech semi
 gsm3434w.pdf

GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex

 9.5. Size:895K  globaltech semi
 gsm3432.pdf

GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m @VGS=2.5V Super high density cell design for extremely These devices are partic

 9.6. Size:842K  globaltech semi
 gsm3430w.pdf

GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low