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SM3439NHQA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM3439NHQA
   Маркировка: SM3439N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 43 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6.6 ns
   Cossⓘ - Выходная емкость: 191 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
   Тип корпуса: DFN3.3X3.3A-8

 Аналог (замена) для SM3439NHQA

 

 

SM3439NHQA Datasheet (PDF)

 ..1. Size:253K  sino
 sm3439nhqa.pdf

SM3439NHQA SM3439NHQA

SM3439NHQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 40V/43A,RDS(ON) = 9.5m (max.) @ VGS =10VGSSRDS(ON) = 13.5m (max.) @ VGS =4.5VS ESD protectionDFN3.3x3.3A-8_EP Lower Qg and Qgd for high-speed switching Lead Free and Green Devices Available(5,6,7,8)DDDD (RoHS Compliant)Applications(4) G Power Management in Notebook Computer,

 9.1. Size:116K  taiwansemi
 tsm3433cx6 tsm3433 a07.pdf

SM3439NHQA SM3439NHQA

 9.2. Size:173K  sino
 sm3433nhqg.pdf

SM3439NHQA SM3439NHQA

SM3433NHQGN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/50A, DDDDRDS(ON) = 2.5m(max.) @ VGS =10VRDS(ON) = 4.1m(max.) @ VGS =4.5VGSSS 100% UIS + Rg Tested Avalanche Rated DFN3.3x3.3-8(Saw-EP) Reliable and Rugged(5,6,7,8) Lower Qg and Qgd for high-speed switchingD D DD Lower RDS(ON) to Minimize Conduction Losses Lead Free and Green

 9.3. Size:895K  globaltech semi
 gsm3436.pdf

SM3439NHQA SM3439NHQA

GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m@VGS=2.5V Super high density cell design for extremely These devices are partic

 9.4. Size:1009K  globaltech semi
 gsm3434w.pdf

SM3439NHQA SM3439NHQA

GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex

 9.5. Size:895K  globaltech semi
 gsm3432.pdf

SM3439NHQA SM3439NHQA

GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V Super high density cell design for extremely These devices are partic

 9.6. Size:842K  globaltech semi
 gsm3430w.pdf

SM3439NHQA SM3439NHQA

GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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History: AP4532GM-HF | BSS123Z

 

 

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