SM3323NHQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3323NHQA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 26.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 54 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: DFN3.3X3.3A-8

Búsqueda de reemplazo de MOSFET SM3323NHQA

SM3323NHQA Datasheet (PDF)

..1. Size:252K sino
sm3323nhqa.pdf

SM3323NHQA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/54A, DDDD RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5VGSSS Reliable and Rugged Lower Qg and Qgd for high-speed switchingDFN3.3x3.3A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoHS Comp

5.1. Size:167K sino
sm3323nhqg.pdf

SM3323NHQG N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/54A,DDDD RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5VGS Reliable and Rugged SS Lower Qg and Qgd for high-speed switchingDFN3x3D-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoHS

9.1. Size:167K sino
sm3324nhqg.pdf

SM3324NHQG N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/77A,DDDD RDS(ON)= 3.6m (Max.) @ VGS=10V RDS(ON)= 5.3m (Max.) @ VGS=4.5VGS Lower Qg and Qgd for high-speed switching SS Lower RDS(ON) to Minimize Conduction LossesDFN3x3D-8_EP ESD Protection(5,6,7,8) 100% UIS + Rg TestedDDDD Reliable and Rugged Lead Free and Green Devic

9.2. Size:273K sino
sm3326nhqa.pdf

SM3326NHQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/27.5A,DDRDS(ON) =9m (max.) @ VGS =10VRDS(ON) =14m (max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3x3A-8_EP ESD Protection Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available(RoHS Compliant)Applications(4) G Power Management in Notebook Computer,Portab

9.3. Size:162K sino
sm3322nhqa.pdf

SM3322NHQA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)= 4.2m (Max.) @ VGS=10V D RDS(ON)= 6.5m (Max.) @ VGS=4.5VG Reliable and Rugged SSS Lower Qg and Qgd for high-speed switchingDFN3x3A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoH

9.4. Size:182K sino
sm3320nsqg.pdf

SM3320NSQA/SM3320NSQGN-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View 30V/49A,DDD DDD DD RDS(ON) = 7.8m(max.) @ VGS =10V RDS(ON) = 12.3m(max.) @ VGS =4.5VGSG SSSSS Integrated Schottky DiodeDFN3x3A-8_EP DFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested(5,6,7,8)DD DD Reliable and Rugged

9.5. Size:1359K globaltech semi
gsm3326ws.pdf

GSM3326WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3326WS, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m@VGS=4.5V P-ChannelThese devices are particularly suited for low -30V/-8A,RDS(ON)=60m@VGS=-10V voltage

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