SM3323NHQA
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3323NHQA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 26.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 54
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8.4
nS
Cossⓘ -
Output Capacitance: 530
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package: DFN3.3X3.3A-8
SM3323NHQA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3323NHQA
Datasheet (PDF)
..1. Size:252K sino
sm3323nhqa.pdf 
SM3323NHQA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/54A, DDDD RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5VGSSS Reliable and Rugged Lower Qg and Qgd for high-speed switchingDFN3.3x3.3A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoHS Comp
5.1. Size:167K sino
sm3323nhqg.pdf
SM3323NHQG N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/54A,DDDD RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5VGS Reliable and Rugged SS Lower Qg and Qgd for high-speed switchingDFN3x3D-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoHS
9.1. Size:167K sino
sm3324nhqg.pdf
SM3324NHQG N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/77A,DDDD RDS(ON)= 3.6m (Max.) @ VGS=10V RDS(ON)= 5.3m (Max.) @ VGS=4.5VGS Lower Qg and Qgd for high-speed switching SS Lower RDS(ON) to Minimize Conduction LossesDFN3x3D-8_EP ESD Protection(5,6,7,8) 100% UIS + Rg TestedDDDD Reliable and Rugged Lead Free and Green Devic
9.2. Size:273K sino
sm3326nhqa.pdf
SM3326NHQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/27.5A,DDRDS(ON) =9m (max.) @ VGS =10VRDS(ON) =14m (max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3x3A-8_EP ESD Protection Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available(RoHS Compliant)Applications(4) G Power Management in Notebook Computer,Portab
9.3. Size:162K sino
sm3322nhqa.pdf
SM3322NHQA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)= 4.2m (Max.) @ VGS=10V D RDS(ON)= 6.5m (Max.) @ VGS=4.5VG Reliable and Rugged SSS Lower Qg and Qgd for high-speed switchingDFN3x3A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoH
9.4. Size:182K sino
sm3320nsqg.pdf
SM3320NSQA/SM3320NSQGN-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View 30V/49A,DDD DDD DD RDS(ON) = 7.8m(max.) @ VGS =10V RDS(ON) = 12.3m(max.) @ VGS =4.5VGSG SSSSS Integrated Schottky DiodeDFN3x3A-8_EP DFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested(5,6,7,8)DD DD Reliable and Rugged
9.5. Size:1359K globaltech semi
gsm3326ws.pdf
GSM3326WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3326WS, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m@VGS=4.5V P-ChannelThese devices are particularly suited for low -30V/-8A,RDS(ON)=60m@VGS=-10V voltage
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