MXP1006AT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MXP1006AT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 333 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 155 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 155 nS
Cossⓘ - Capacitancia de salida: 425 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de MXP1006AT MOSFET
- Selecciónⓘ de transistores por parámetros
MXP1006AT datasheet
mxp1006at.pdf
MXP1006AT 100V N-Channel MOSFET Applications Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 6m 155A High Efficiency Synchronous Rectification in SMPS Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Ruggedness Ordering Information Park Number
mxp1008at.pdf
MXP1008AT 100V N-Channel MOSFET Applications Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 8m 115A High Efficiency Synchronous Rectification in SMPS Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Ruggedness Ordering Information Park Number
mxp1007at.pdf
MXP1007AT 100V N-ch Power MOSFET General Features BVDSS RDS(ON),max. ID[2] Proprietary New Trench Technology 100V 7.0m 143 RDS(ON),typ.=5.3m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Pa
mxp1015at.pdf
MXP1015AT 100V N-Channel MOSFET Applications Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 15m 82A High Efficiency Synchronous Rectification in SMPS Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Ruggedness Ordering Information Park Number
Otros transistores... SM3315NSQG , SM3319NAQG , SM3319NSQA , SM3319NSQG , SM3317NSQA , SM3317NSQG , SM3316NSQA , SM3316NSQG , IRF640 , MXP1007AT , MXP1008AT , MXP1015AT , MXP43P9AD , MXP43P9AE , MXP43P9AF , MXP43P9AT , MXP65D7AQ .
History: APT47N65BC3 | 2SK1879 | FTS2057 | IRFB3006
History: APT47N65BC3 | 2SK1879 | FTS2057 | IRFB3006
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
2n2613 | c2166 transistor | 2sd330 | 20n60 | ksa1013 | mje15032g datasheet | 2sc2166 | 2sc5198
