All MOSFET. MXP1006AT Datasheet

 

MXP1006AT MOSFET. Datasheet pdf. Equivalent

Type Designator: MXP1006AT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 333 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 155 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 155 nS

Drain-Source Capacitance (Cd): 425 pF

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: TO220

MXP1006AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MXP1006AT Datasheet (PDF)

0.1. mxp1006at.pdf Size:232K _maxpower

MXP1006AT
MXP1006AT

MXP1006AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 6m 155A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number

8.1. mxp1007at.pdf Size:582K _maxpower

MXP1006AT
MXP1006AT

MXP1007AT 100V N-ch Power MOSFET General Features BVDSS RDS(ON),max. ID[2] Proprietary New Trench Technology 100V 7.0m 143 RDS(ON),typ.=5.3m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Pa

8.2. mxp1008at.pdf Size:255K _maxpower

MXP1006AT
MXP1006AT

MXP1008AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 8m 115A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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