All MOSFET. MXP1006AT Datasheet

 

MXP1006AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: MXP1006AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 155 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 175 nC
   trⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 425 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220

 MXP1006AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MXP1006AT Datasheet (PDF)

 ..1. Size:232K  maxpower
 mxp1006at.pdf

MXP1006AT MXP1006AT

MXP1006AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 6m 155A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number

 8.1. Size:255K  maxpower
 mxp1008at.pdf

MXP1006AT MXP1006AT

MXP1008AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 8m 115A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number

 8.2. Size:582K  maxpower
 mxp1007at.pdf

MXP1006AT MXP1006AT

MXP1007AT 100V N-ch Power MOSFET General Features BVDSS RDS(ON),max. ID[2] Proprietary New Trench Technology 100V 7.0m 143 RDS(ON),typ.=5.3m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Pa

 9.1. Size:231K  maxpower
 mxp1015at.pdf

MXP1006AT MXP1006AT

MXP1015AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 15m 82A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number

 9.2. Size:123K  maxpower
 mxp1018ct.pdf

MXP1006AT MXP1006AT

MXP1018CT Datasheet 100V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 100 V 18 m 76Features: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP1018 TO220 MXP Absolute Maximum Ratings Tc=2

Datasheet: SM3315NSQG , SM3319NAQG , SM3319NSQA , SM3319NSQG , SM3317NSQA , SM3317NSQG , SM3316NSQA , SM3316NSQG , IRF640 , MXP1007AT , MXP1008AT , MXP1015AT , MXP43P9AD , MXP43P9AE , MXP43P9AF , MXP43P9AT , MXP65D7AQ .

History: MSU5N50

 

 
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