NCEP85T25T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP85T25T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 360 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 250 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 1700 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET NCEP85T25T
NCEP85T25T Datasheet (PDF)
ncep85t25t.pdf
Pb Free Producthttp://www.ncepower.com NCEP85T25TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep85t25vd.pdf
http://www.ncepower.com NCEP85T25VDNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25VD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc
ncep85t25.pdf
Pb Free Producthttp://www.ncepower.comNCEP85T25NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-f
ncep85t25d.pdf
Pb Free Producthttp://www.ncepower.com NCEP85T25DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... IRF7416 , IRF742 , IRF7421D1 , IRF7422D2 , IRF743 , IRF744 , NCEP85T16D , NCEP85T25D , SPP20N60C3 , NCEP85T35T , IRF750A , IRF7521D1 , IRF7523D1 , IRF7524D1 , IRF7526D1 , IRF7555 , IRF7601 .
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Recientemente añadidas las descripciónes de los transistores:
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