All MOSFET. NCEP85T25T Datasheet

 

NCEP85T25T Datasheet and Replacement


   Type Designator: NCEP85T25T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 142 nC
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO247
 

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NCEP85T25T Datasheet (PDF)

 ..1. Size:298K  ncepower
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NCEP85T25T

Pb Free Producthttp://www.ncepower.com NCEP85T25TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:1128K  ncepower
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NCEP85T25T

http://www.ncepower.com NCEP85T25VDNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25VD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

 5.2. Size:753K  ncepower
ncep85t25.pdf pdf_icon

NCEP85T25T

Pb Free Producthttp://www.ncepower.comNCEP85T25NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-f

 5.3. Size:296K  ncepower
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NCEP85T25T

Pb Free Producthttp://www.ncepower.com NCEP85T25DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Datasheet: IRF7416 , IRF742 , IRF7421D1 , IRF7422D2 , IRF743 , IRF744 , NCEP85T16D , NCEP85T25D , 5N60 , NCEP85T35T , IRF750A , IRF7521D1 , IRF7523D1 , IRF7524D1 , IRF7526D1 , IRF7555 , IRF7601 .

History: SI2310A | TK20A25D

Keywords - NCEP85T25T MOSFET datasheet

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