SM9994DSO Todos los transistores

SM9994DSO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D S2 20V/9A, S2 G2 RDS(ON)= 9.5m (max.) @ VGS= 4.5V RDS(ON)= 10m (max.) @ VGS= 4V D S1 RDS(ON)= 10.5m (max.) @ VGS= 3.7V S1 G1 RDS(ON)= 11.5m (max.) @ VGS= 3.1V RDS(ON)= 13m (max.) @ VGS= 2.5V Top View of TSSOP-8 Reliable and Rugged (1) (8) ESD Protected D D Lead Free and Green Devices Available

SM9993DSQG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/12A, G2 S2S2 RDS(ON)= 7.4m (Max.) @ VGS=4.5V RDS(ON)= 7.6m (Max.) @ VGS=4V RDS(ON)= 8m (Max.) @ VGS=3.7V G1 RDS(ON)= 8.7m (Max.) @ VGS=3.1V S1S1 RDS(ON)= 10m (Max.) @ VGS=2.5V DFN2x3-6 Reliable and Rugged Lead Free and Green Devices Available D D (RoHS Compliant) ESD protection (3) (4)

SM9992DSQG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/12A, S2 RDS(ON)=8.1m (Max.) @ VGS=4.5V S2 G2 RDS(ON)=8.5m (Max.) @ VGS=4V RDS(ON)=8.8m (Max.) @ VGS=3.7V S1 S1 RDS(ON)=9.2m (Max.) @ VGS=3.1V G1 RDS(ON)=11m (Max.) @ VGS=2.5V Top View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices Available D D (RoHS Complian

SM9990DSQG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6.2A, RDS(ON)= 31m (Max.) @ VGS=4V RDS(ON)= 36m (Max.) @ VGS=3.1V RDS(ON)= 42m (Max.) @ VGS=2.5V Reliable and Rugged Lead Free and Green Devices Available DFN2x2-8 (top/bottom) (RoHS Compliant) ESD Protection D(5) D(6) D(7) D(8) (2) (4) G1 G2 Applications Power Management in Notebook Compute

SM9998DSQG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/9.7A, G2 S2S2 RDS(ON)= 7.5m (Max.) @ VGS=4.5V RDS(ON)= 7.9m (Max.) @ VGS=4V RDS(ON)= 8.2m (Max.) @ VGS=3.7V G1 RDS(ON)= 8.7m (Max.) @ VGS=3.1V S1S1 RDS(ON)= 9.9m (Max.) @ VGS=2.5V DFN2x3A-6_EP ESD protection 100% UIS Tested D D Reliable and Rugged Lead Free and Green Dev

GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m @VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L

GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low