SM9994DSO MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SM9994DSO
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 27 nC
Время нарастания (tr): 16 ns
Выходная емкость (Cd): 370 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0095 Ohm
Тип корпуса: TSSOP8
SM9994DSO Datasheet (PDF)
sm9994dso.pdf
SM9994DSODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDS2 20V/9A,S2G2RDS(ON)= 9.5m (max.) @ VGS= 4.5VRDS(ON)= 10m (max.) @ VGS= 4VDS1RDS(ON)= 10.5m (max.) @ VGS= 3.7VS1G1RDS(ON)= 11.5m (max.) @ VGS= 3.1VRDS(ON)= 13m (max.) @ VGS= 2.5VTop View of TSSOP-8 Reliable and Rugged(1) (8) ESD ProtectedD D Lead Free and Green Devices Available
sm9993dsqg.pdf
SM9993DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A,G2S2S2 RDS(ON)= 7.4m (Max.) @ VGS=4.5V RDS(ON)= 7.6m (Max.) @ VGS=4V RDS(ON)= 8m (Max.) @ VGS=3.7VG1 RDS(ON)= 8.7m (Max.) @ VGS=3.1VS1S1 RDS(ON)= 10m (Max.) @ VGS=2.5VDFN2x3-6 Reliable and Rugged Lead Free and Green Devices AvailableD D(RoHS Compliant) ESD protection(3) (4)
sm9992dsqg.pdf
SM9992DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A,S2 RDS(ON)=8.1m (Max.) @ VGS=4.5VS2G2 RDS(ON)=8.5m (Max.) @ VGS=4V RDS(ON)=8.8m (Max.) @ VGS=3.7VS1S1 RDS(ON)=9.2m (Max.) @ VGS=3.1VG1 RDS(ON)=11m (Max.) @ VGS=2.5VTop View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices AvailableD D(RoHS Complian
sm9990dsqg.pdf
SM9990DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.2A,RDS(ON)= 31m (Max.) @ VGS=4VRDS(ON)= 36m (Max.) @ VGS=3.1VRDS(ON)= 42m (Max.) @ VGS=2.5V Reliable and Rugged Lead Free and Green Devices AvailableDFN2x2-8 (top/bottom)(RoHS Compliant) ESD ProtectionD(5) D(6) D(7) D(8)(2) (4)G1G2Applications Power Management in Notebook Compute
sm9998dsqg.pdf
SM9998DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/9.7A,G2S2S2 RDS(ON)= 7.5m (Max.) @ VGS=4.5V RDS(ON)= 7.9m (Max.) @ VGS=4V RDS(ON)= 8.2m (Max.) @ VGS=3.7VG1 RDS(ON)= 8.7m (Max.) @ VGS=3.1VS1S1 RDS(ON)= 9.9m (Max.) @ VGS=2.5VDFN2x3A-6_EP ESD protection 100% UIS TestedD D Reliable and Rugged Lead Free and Green Dev
gsm9990s.pdf
GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m@VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L
gsm9997.pdf
GSM9997 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9997, N-Channel enhancement mode 100V/8A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm9995s.pdf
GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
