SM4041DSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM4041DSK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6.8 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
   Paquete / Cubierta: SOP8

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SM4041DSK Datasheet (PDF)

..1. Size:237K sino
sm4041dsk.pdf

SM4041DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 40V/7.8A,D1D2D2RDS(ON) = 14.5m (max.) @ VGS = 10VRDS(ON) = 18m (max.) @ VGS = 4.5VS1 100% UIS + Rg TestedG1S2G2 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Car charger.(2) (4) Power Man

9.1. Size:235K sino
sm4040dsk.pdf

SM4040DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 40V/7A,D1D2D2RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 27m (max.) @ VGS = 4.5VS1 100% UIS + Rg TestedG1S2G2 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Power Management in Note book.(2) (

9.2. Size:272K sino
sm4042dsk.pdf

SM4042DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 Channel 1D1D2D240V/6.5A,RDS(ON) = 18m (max.) @ VGS = 10VS1RDS(ON) = 25m (max.) @ VGS = 4.5VG1S2 Channel 2 (ESD Protection)G2Top View of SOP-840V/7.4A,RDS(ON) = 14m (max.) @ VGS =10V(8) (7) (6) (5)RDS(ON) = 18m (max.) @ VGS =4.5VD1 D1 D2 D2 100% UIS + Rg Tested Reliable an

9.3. Size:913K globaltech semi
gsm4048ws.pdf

GSM4048WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=10m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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