All MOSFET. SM4041DSK Datasheet

 

SM4041DSK MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM4041DSK
   Marking Code: 4041DS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: SOP8

 SM4041DSK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM4041DSK Datasheet (PDF)

 ..1. Size:237K  sino
sm4041dsk.pdf

SM4041DSK
SM4041DSK

SM4041DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 40V/7.8A,D1D2D2RDS(ON) = 14.5m (max.) @ VGS = 10VRDS(ON) = 18m (max.) @ VGS = 4.5VS1 100% UIS + Rg TestedG1S2G2 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Car charger.(2) (4) Power Man

 9.1. Size:235K  sino
sm4040dsk.pdf

SM4041DSK
SM4041DSK

SM4040DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 40V/7A,D1D2D2RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 27m (max.) @ VGS = 4.5VS1 100% UIS + Rg TestedG1S2G2 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Power Management in Note book.(2) (

 9.2. Size:272K  sino
sm4042dsk.pdf

SM4041DSK
SM4041DSK

SM4042DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 Channel 1D1D2D240V/6.5A,RDS(ON) = 18m (max.) @ VGS = 10VS1RDS(ON) = 25m (max.) @ VGS = 4.5VG1S2 Channel 2 (ESD Protection)G2Top View of SOP-840V/7.4A,RDS(ON) = 14m (max.) @ VGS =10V(8) (7) (6) (5)RDS(ON) = 18m (max.) @ VGS =4.5VD1 D1 D2 D2 100% UIS + Rg Tested Reliable an

 9.3. Size:913K  globaltech semi
gsm4048ws.pdf

SM4041DSK
SM4041DSK

GSM4048WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=10m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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