NCEP85T35T Todos los transistores

 

NCEP85T35T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP85T35T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 520 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 350 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 324 nC
   trⓘ - Tiempo de subida: 98 nS
   Cossⓘ - Capacitancia de salida: 2990 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00185 Ohm
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de NCEP85T35T MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP85T35T Datasheet (PDF)

 ..1. Size:313K  ncepower
ncep85t35t.pdf pdf_icon

NCEP85T35T

Pb Free Producthttp://www.ncepower.com NCEP85T35TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T35T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.1. Size:333K  ncepower
ncep85t30ll.pdf pdf_icon

NCEP85T35T

NCEP85T30LLNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP85T30LL uses Super Trench technology that is VDS =85V,ID =330A uniquely optimized to provide the most efficient high RDS(ON)=1.6m , typical @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching power losses are min

 6.2. Size:352K  ncepower
ncep85t30t.pdf pdf_icon

NCEP85T35T

http://www.ncepower.com NCEP85T30TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 7.1. Size:912K  ncepower
ncep85t15d.pdf pdf_icon

NCEP85T35T

http://www.ncepower.com NCEP85T15DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T15D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

Otros transistores... IRF742 , IRF7421D1 , IRF7422D2 , IRF743 , IRF744 , NCEP85T16D , NCEP85T25D , NCEP85T25T , AO3400 , IRF750A , IRF7521D1 , IRF7523D1 , IRF7524D1 , IRF7526D1 , IRF7555 , IRF7601 , IRF7603 .

History: IRC530 | BUK114-50L | FDS3580

 

 
Back to Top

 


 
.