NCEP85T35T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP85T35T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 520 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 350 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 98 nS
Cossⓘ - Capacitancia de salida: 2990 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00185 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de NCEP85T35T MOSFET
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NCEP85T35T datasheet
..1. Size:313K ncepower
ncep85t35t.pdf 
Pb Free Product http //www.ncepower.com NCEP85T35T NCE N-Channel Super Trench Power MOSFET Description The NCEP85T35T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.1. Size:333K ncepower
ncep85t30ll.pdf
NCEP85T30LL NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP85T30LL uses Super Trench technology that is VDS =85V,ID =330A uniquely optimized to provide the most efficient high RDS(ON)=1.6m , typical @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching power losses are min
6.2. Size:352K ncepower
ncep85t30t.pdf
http //www.ncepower.com NCEP85T30T NCE N-Channel Super Trench Power MOSFET Description The NCEP85T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
7.1. Size:912K ncepower
ncep85t15d.pdf
http //www.ncepower.com NCEP85T15D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi
7.2. Size:323K ncepower
ncep85t16d.pdf
Pb Free Product http //www.ncepower.com NCEP85T16D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
7.3. Size:1128K ncepower
ncep85t25vd.pdf
http //www.ncepower.com NCEP85T25VD NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc
7.4. Size:323K ncepower
ncep85t12.pdf
Pb Free Product http //www.ncepower.com NCEP85T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
7.5. Size:753K ncepower
ncep85t25.pdf
Pb Free Product http //www.ncepower.com NCEP85T25 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-f
7.6. Size:347K ncepower
ncep85t12d.pdf
Pb Free Product http //www.ncepower.com NCEP85T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
7.7. Size:385K ncepower
ncep85t14.pdf
Pb Free Product http //www.ncepower.com NCEP85T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
7.8. Size:296K ncepower
ncep85t25d.pdf
Pb Free Product http //www.ncepower.com NCEP85T25D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
7.9. Size:345K ncepower
ncep85t16.pdf
Pb Free Product http //www.ncepower.com NCEP85T16 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
7.10. Size:365K ncepower
ncep85t10g.pdf
http //www.ncepower.com NCEP85T10G NCE N-Channel Super Trench Power MOSFET Description The NCEP85T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
7.11. Size:298K ncepower
ncep85t25t.pdf
Pb Free Product http //www.ncepower.com NCEP85T25T NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
7.12. Size:385K ncepower
ncep85t11.pdf
Pb Free Product http //www.ncepower.com NCEP85T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
7.13. Size:342K ncepower
ncep85t15.pdf
Pb Free Product http //www.ncepower.com NCEP85T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
7.14. Size:355K ncepower
ncep85t14d.pdf
Pb Free Product http //www.ncepower.com NCEP85T14D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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