All MOSFET. NCEP85T35T Datasheet

 

NCEP85T35T MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP85T35T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 350 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 324 nC
   trⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 2990 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00185 Ohm
   Package: TO247

 NCEP85T35T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP85T35T Datasheet (PDF)

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