SM8205AO MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM8205AO datasheet

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SM8205AO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D2 18V/6A, S2 S2 RDS(ON)= 23m (typ.) @ VGS= 4.5V G2 RDS(ON)= 34m (typ.) @ VGS= 2.5V D1 100% UIS Tested S1 S1 G1 Reliable and Rugged Lead Free and Green Devices Available Top View of TSSOP-8 (RoHS Compliant) (1) (8) D1 D2 Applications (4) (5) Power Management in Notebook Computer, G1 G2 Po

8.1. Size:436K globaltech semi
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20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=37m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m @VGS=1.8V These devices are particularly suited for low Super high density cell design for ext

9.1. Size:275K sino
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SM8206ACT Dual N-Channel Enhancement Mode MOSFET Features Pin Description G1 20V/6A, D1/D2 G2 RDS(ON)= 26m (max.) @ VGS= 4V RDS(ON)= 36m (max.) @ VGS= 2.5V S1 Super High Dense Cell Design D1/D2 S2 Reliable and Rugged Lead Free and Green Devices Available Top View of TSOT-23-6 (RoHS Compliant) (2) (5) D2 D1 Applications Power Management in Notebook C

9.2. Size:260K sino
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SM8206AO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D 20V/6A, S2 S2 G2 RDS(ON)= 20m (typ.) @ VGS= 10V RDS(ON)= 23m (typ.) @ VGS= 4.5V D S1 RDS(ON)= 27m (typ.) @ VGS= 3.1V S1 G1 RDS(ON)= 30m (typ.) @ VGS= 2.5V RDS(ON)= 42m (typ.) @ VGS= 1.8V Top View of TSSOP-8 Reliable and Rugged (1) (8) ESD Protected D D Lead Free and Green Devices Available (RoH