All MOSFET. SM8205AO Datasheet

 

SM8205AO MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM8205AO
   Marking Code: SM8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0245 Ohm
   Package: TSSOP8

 SM8205AO Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM8205AO Datasheet (PDF)

 ..1. Size:235K  sino
 sm8205ao.pdf

SM8205AO SM8205AO

SM8205AODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD2 18V/6A,S2S2RDS(ON)= 23m (typ.) @ VGS= 4.5VG2RDS(ON)= 34m (typ.) @ VGS= 2.5VD1 100% UIS Tested S1S1G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of TSSOP-8 (RoHS Compliant)(1) (8)D1 D2Applications(4) (5) Power Management in Notebook Computer,G1G2Po

 8.1. Size:436K  globaltech semi
 gsm8205.pdf

SM8205AO SM8205AO

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=37m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m@VGS=1.8V These devices are particularly suited for low Super high density cell design for ext

 9.1. Size:275K  sino
 sm8206act.pdf

SM8205AO SM8205AO

SM8206ACTDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionG1 20V/6A,D1/D2G2 RDS(ON)= 26m(max.) @ VGS= 4V RDS(ON)= 36m(max.) @ VGS= 2.5VS1 Super High Dense Cell DesignD1/D2S2 Reliable and Rugged Lead Free and Green Devices AvailableTop View of TSOT-23-6 (RoHS Compliant)(2) (5)D2D1Applications Power Management in Notebook C

 9.2. Size:260K  sino
 sm8206ao.pdf

SM8205AO SM8205AO

SM8206AODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 20V/6A, S2S2G2RDS(ON)= 20m (typ.) @ VGS= 10VRDS(ON)= 23m (typ.) @ VGS= 4.5VDS1RDS(ON)= 27m (typ.) @ VGS= 3.1VS1G1RDS(ON)= 30m (typ.) @ VGS= 2.5VRDS(ON)= 42m (typ.) @ VGS= 1.8VTop View of TSSOP-8 Reliable and Rugged(1) (8) ESD ProtectedD D Lead Free and Green Devices Available (RoH

 9.3. Size:846K  globaltech semi
 gsm8206.pdf

SM8205AO SM8205AO

GSM8206 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8206, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=56m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m@VGS=-1.8V Super high density cell design for extremely These devices a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQP13N10

 

 
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