SM2207PSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM2207PSQG
   Código: 2207B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 8.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: DFN2X2A-6

Búsqueda de reemplazo de MOSFET SM2207PSQG

SM2207PSQG Datasheet (PDF)

..1. Size:179K sino
sm2207psqg.pdf

SM2207PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-8.7A,SDDDRDS(ON) = 22m(max.) @ VGS =-4.5VRDS(ON) = 30m(max.) @ VGS =-2.5VG SPin 1RDS(ON) = 38m(max.) @ VGS =-1.8VDDRDS(ON) = 57m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDD DD(RoHS Compliant)Applications(3)G

9.1. Size:185K sino
sm2202nsqe.pdf

SM2202NSQEN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5V GSD Pin 1D Avalanche RatedTDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

9.2. Size:184K sino
sm2201nsqg.pdf

SM2201NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/10.2A,DDRDS(ON) = 10.5m(max.) @ VGS =10VRDS(ON) = 14m(max.) @ VGS =4.5VGSDPin 1D Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable

9.3. Size:181K sino
sm2204nsqg.pdf

SM2204NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7A,DDRDS(ON) = 23m(max.) @ VGS =10VRDS(ON) = 31.5m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD(RoHS Compliant) 100% UIS TestedApplications(3)G Load Switch HDD (4)S DC/DC ConverterN

9.4. Size:187K sino
sm2202nsqg.pdf

SM2202NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

9.5. Size:186K sino
sm2203nsqg.pdf

SM2203NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7.4A,DDRDS(ON) = 20.5m(max.) @ VGS =10VRDS(ON) = 28.5m(max.) @ VGS =4.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable

9.6. Size:180K sino
sm2205psqg.pdf

SM2205PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-6.5A,DDRDS(ON) = 39m(max.) @ VGS =-4.5VRDS(ON) = 56m(max.) @ VGS =-2.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,(4)SPortable Equipment and Bat

9.7. Size:259K sino
sm2206nsqg.pdf

SM2206NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 20V/9A,DDRDS(ON) = 10.9m (max.) @ VGS =4.5VRDS(ON) = 15.5m (max.) @ VGS =2.5V SGPin 1DDRDS(ON) = 26m (max.) @ VGS =1.8V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Li-lon Battery Pac

9.8. Size:258K sino
sm2208nsqg.pdf

SM2208NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 24V/12A,DDRDS(ON) = 5.8m (max.) @ VGS =10VRDS(ON) = 6.9m (max.) @ VGS =4.5VG SPin 1DDRDS(ON) = 10m (max.) @ VGS =2.5V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Battery Management A

9.9. Size:1198K huashuo
hsm2202.pdf

HSM2202 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2202 is the high cell density trenched N-V 20 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 9.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM2202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi

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