All MOSFET. SM2207PSQG Datasheet

 

SM2207PSQG MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM2207PSQG
   Marking Code: 2207B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN2X2A-6

 SM2207PSQG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM2207PSQG Datasheet (PDF)

 ..1. Size:179K  sino
sm2207psqg.pdf

SM2207PSQG
SM2207PSQG

SM2207PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-8.7A,SDDDRDS(ON) = 22m(max.) @ VGS =-4.5VRDS(ON) = 30m(max.) @ VGS =-2.5VG SPin 1RDS(ON) = 38m(max.) @ VGS =-1.8VDDRDS(ON) = 57m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDD DD(RoHS Compliant)Applications(3)G

 9.1. Size:185K  sino
sm2202nsqe.pdf

SM2207PSQG
SM2207PSQG

SM2202NSQEN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5V GSD Pin 1D Avalanche RatedTDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

 9.2. Size:184K  sino
sm2201nsqg.pdf

SM2207PSQG
SM2207PSQG

SM2201NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/10.2A,DDRDS(ON) = 10.5m(max.) @ VGS =10VRDS(ON) = 14m(max.) @ VGS =4.5VGSDPin 1D Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable

 9.3. Size:181K  sino
sm2204nsqg.pdf

SM2207PSQG
SM2207PSQG

SM2204NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7A,DDRDS(ON) = 23m(max.) @ VGS =10VRDS(ON) = 31.5m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD(RoHS Compliant) 100% UIS TestedApplications(3)G Load Switch HDD (4)S DC/DC ConverterN

 9.4. Size:187K  sino
sm2202nsqg.pdf

SM2207PSQG
SM2207PSQG

SM2202NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

 9.5. Size:186K  sino
sm2203nsqg.pdf

SM2207PSQG
SM2207PSQG

SM2203NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7.4A,DDRDS(ON) = 20.5m(max.) @ VGS =10VRDS(ON) = 28.5m(max.) @ VGS =4.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable

 9.6. Size:180K  sino
sm2205psqg.pdf

SM2207PSQG
SM2207PSQG

SM2205PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-6.5A,DDRDS(ON) = 39m(max.) @ VGS =-4.5VRDS(ON) = 56m(max.) @ VGS =-2.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,(4)SPortable Equipment and Bat

 9.7. Size:259K  sino
sm2206nsqg.pdf

SM2207PSQG
SM2207PSQG

SM2206NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 20V/9A,DDRDS(ON) = 10.9m (max.) @ VGS =4.5VRDS(ON) = 15.5m (max.) @ VGS =2.5V SGPin 1DDRDS(ON) = 26m (max.) @ VGS =1.8V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Li-lon Battery Pac

 9.8. Size:258K  sino
sm2208nsqg.pdf

SM2207PSQG
SM2207PSQG

SM2208NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 24V/12A,DDRDS(ON) = 5.8m (max.) @ VGS =10VRDS(ON) = 6.9m (max.) @ VGS =4.5VG SPin 1DDRDS(ON) = 10m (max.) @ VGS =2.5V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Battery Management A

 9.9. Size:1198K  huashuo
hsm2202.pdf

SM2207PSQG
SM2207PSQG

HSM2202 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2202 is the high cell density trenched N-V 20 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 9.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM2202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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