SM2307PSA MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM2307PSA datasheet

..1. Size:259K sino
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SM2307PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-6A , D RDS(ON)=29m (Max.) @ VGS=-4.5V S RDS(ON)=40m (Max.) @ VGS=-2.5V G RDS(ON)=60m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered

8.1. Size:186K taiwansemi
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TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 95 @ VGS = -10V -3 -30 140 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No

8.2. Size:953K globaltech semi
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GSM2307A GSM2307A 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-1.8A,RDS(ON)=520m @VGS=-4.5V GSM2307A, P-Channel enhancement mode -20V/-1.5A,RDS(ON)=870m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi

8.3. Size:176K silicon standard
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SSM2307GN P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D BVDSS -16V Simple Drive Requirement RDS(ON) 60m Small Package Outline Surface Mount Device ID - 4A S SOT-23 G DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec