SM2307PSA - описание и поиск аналогов

SM2307PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-6A , D RDS(ON)=29m (Max.) @ VGS=-4.5V S RDS(ON)=40m (Max.) @ VGS=-2.5V G RDS(ON)=60m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered

TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 95 @ VGS = -10V -3 -30 140 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No

GSM2307A GSM2307A 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-1.8A,RDS(ON)=520m @VGS=-4.5V GSM2307A, P-Channel enhancement mode -20V/-1.5A,RDS(ON)=870m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi

SSM2307GN P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D BVDSS -16V Simple Drive Requirement RDS(ON) 60m Small Package Outline Surface Mount Device ID - 4A S SOT-23 G DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec

SSM2307G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION