SM2363PSA Todos los transistores

 

SM2363PSA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM2363PSA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 31 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.225 Ohm
   Paquete / Cubierta: SOT23
 

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SM2363PSA datasheet

 ..1. Size:230K  sino
 sm2363psa.pdf pdf_icon

SM2363PSA

SM2363PSA P-Channel Enhancement Mode MOSFET Features Pin Description -60V/-1.8A, D RDS(ON)= 225m (max.) @ VGS=-10V RDS(ON)= 300m (max.) @ VGS=-4.5V S ESD Protection G 100% UIS+Rg Tested Top View of SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. Load switch. S P-Channel MOSFET

 9.1. Size:261K  sino
 sm2360nsa.pdf pdf_icon

SM2363PSA

SM2360NSA N-Channel Enhancement Mode MOSFET Features Pin Description 60V/2.7A , D RDS(ON)=104m (max.) @ VGS=10V S RDS(ON)=130m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Information SM2360NS Packa

 9.2. Size:842K  globaltech semi
 gsm2367as.pdf pdf_icon

SM2363PSA

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m @VGS=-1.8V These devices are particularly suited for low Super high density cell

 9.3. Size:850K  globaltech semi
 gsm2367s.pdf pdf_icon

SM2363PSA

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m @VGS=-1.8V These devices are particularly suited for low Super high density cell d

MOSTRAR MÁS

Otros transistores... SM2319PSAN , SM2321PSA , SM2323PSA , SM2329PSA , SM2331PSA , SM2333PSA , SM2335PSA , SM2337PSA , 4435 , SM4303PSK , SM4303PSU , SM4303PSUC , SM4305PSK , SM4305PSKP , SM4307PSK , SM4307PSKP , SM4309PSK .

 

 
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