SM3331PSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3331PSQG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 593 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0061 Ohm
   Paquete / Cubierta: DFN3.3X3.3B-8

Búsqueda de reemplazo de MOSFET SM3331PSQG

SM3331PSQG Datasheet (PDF)

..1. Size:163K sino
sm3331psqg.pdf

SM3331PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-40A,DDDDRDS(ON) = 6.1m(max.) @ VGS =-10VRDS(ON) = 11m(max.) @ VGS =-4.5VG HBM ESD protection level pass 8KV SSS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )DDDD (RoHS Compliant)Note : The diode connected bet

9.1. Size:251K sino
sm3335psqa.pdf

SM3335PSQA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-39A,DDDDRDS(ON) = 14m (max.) @ VGS =-10VRDS(ON) = 24m (max.) @ VGS =-4.5VGS 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 3KVNote : The diode connected between the gate andsou

9.2. Size:166K sino
sm3337psqa.pdf

SM3337PSQA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-32A,DDDDRDS(ON) = 19m(max.) @ VGS =-10VRDS(ON) = 32m(max.) @ VGS =-4.5VGS 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 2KVNote : The diode connected between the gate and

9.3. Size:160K sino
sm3335psqg.pdf

SM3335PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-39A,DDDDRDS(ON) = 14m(max.) @ VGS =-10VRDS(ON) = 24m(max.) @ VGS =-4.5VSG 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3D-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 3KVNote : The diode connected between the gate ands

9.4. Size:159K sino
sm3337psqg.pdf

SM3337PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-32A,DDDDRDS(ON) = 19m(max.) @ VGS =-10VRDS(ON) = 32m(max.) @ VGS =-4.5V Reliable and RuggedSGSS Lead Free and Green Devices AvailableDFN3x3D-8_EP (RoHS Compliant) 100% UIS + Rg Tested( 5,6,7,8 )DDDD ESD protection pass 2KVNote : The diode connected between the gate ands

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