SM3337PSQG Todos los transistores

 

SM3337PSQG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM3337PSQG

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 29.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10.6 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm

Encapsulados: DFN3X3D-8

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SM3337PSQG datasheet

 ..1. Size:159K  sino
sm3337psqg.pdf pdf_icon

SM3337PSQG

SM3337PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-32A, D D D D RDS(ON) = 19m (max.) @ VGS =-10V RDS(ON) = 32m (max.) @ VGS =-4.5V Reliable and Rugged SG S S Lead Free and Green Devices Available DFN3x3D-8_EP (RoHS Compliant) 100% UIS + Rg Tested ( 5,6,7,8 ) DDDD ESD protection pass 2KV Note The diode connected between the gate and s

 5.1. Size:166K  sino
sm3337psqa.pdf pdf_icon

SM3337PSQG

SM3337PSQA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-32A, D D D D RDS(ON) = 19m (max.) @ VGS =-10V RDS(ON) = 32m (max.) @ VGS =-4.5V G S 100% UIS + Rg Tested S S Reliable and Rugged DFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant) ( 5,6,7,8 ) DDDD ESD protection pass 2KV Note The diode connected between the gate and

 9.1. Size:251K  sino
sm3335psqa.pdf pdf_icon

SM3337PSQG

SM3335PSQA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-39A, D D D D RDS(ON) = 14m (max.) @ VGS =-10V RDS(ON) = 24m (max.) @ VGS =-4.5V G S 100% UIS + Rg Tested S S Reliable and Rugged DFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant) ( 5,6,7,8 ) DDDD ESD protection pass 3KV Note The diode connected between the gate and sou

 9.2. Size:163K  sino
sm3331psqg.pdf pdf_icon

SM3337PSQG

SM3331PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-40A, D D D D RDS(ON) = 6.1m (max.) @ VGS =-10V RDS(ON) = 11m (max.) @ VGS =-4.5V G HBM ESD protection level pass 8KV S S S 100% UIS + Rg Tested DFN3.3x3.3-8(Saw-EP) Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) DDDD (RoHS Compliant) Note The diode connected bet

Otros transistores... SM2403PSAN , SM2413PSAN , SM2421PSAN , SM2425PSAN , SM2601PSC , SM2605PSC , SM2609PSC , SM3337PSQA , 5N60 , SM3403PSQG , SM3407PSQA , SM3413PSQG , SM4310PSK , SM4311PSKP , SM4331PSK , SM2613PSC , SM2617PSC .

History: STD1NK80Z-1 | 3N80L-TF2-T

 

 

 


History: STD1NK80Z-1 | 3N80L-TF2-T

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