SM3335PSQA Todos los transistores

 

SM3335PSQA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM3335PSQA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: DFN3X3A-8

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SM3335PSQA datasheet

 ..1. Size:251K  sino
 sm3335psqa.pdf pdf_icon

SM3335PSQA

SM3335PSQA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-39A, D D D D RDS(ON) = 14m (max.) @ VGS =-10V RDS(ON) = 24m (max.) @ VGS =-4.5V G S 100% UIS + Rg Tested S S Reliable and Rugged DFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant) ( 5,6,7,8 ) DDDD ESD protection pass 3KV Note The diode connected between the gate and sou

 5.1. Size:160K  sino
 sm3335psqg.pdf pdf_icon

SM3335PSQA

SM3335PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-39A, D D D D RDS(ON) = 14m (max.) @ VGS =-10V RDS(ON) = 24m (max.) @ VGS =-4.5V SG 100% UIS + Rg Tested S S Reliable and Rugged DFN3x3D-8_EP Lead Free and Green Devices Available (RoHS Compliant) ( 5,6,7,8 ) DDDD ESD protection pass 3KV Note The diode connected between the gate and s

 9.1. Size:163K  sino
 sm3331psqg.pdf pdf_icon

SM3335PSQA

SM3331PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-40A, D D D D RDS(ON) = 6.1m (max.) @ VGS =-10V RDS(ON) = 11m (max.) @ VGS =-4.5V G HBM ESD protection level pass 8KV S S S 100% UIS + Rg Tested DFN3.3x3.3-8(Saw-EP) Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) DDDD (RoHS Compliant) Note The diode connected bet

 9.2. Size:166K  sino
 sm3337psqa.pdf pdf_icon

SM3335PSQA

SM3337PSQA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-32A, D D D D RDS(ON) = 19m (max.) @ VGS =-10V RDS(ON) = 32m (max.) @ VGS =-4.5V G S 100% UIS + Rg Tested S S Reliable and Rugged DFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant) ( 5,6,7,8 ) DDDD ESD protection pass 2KV Note The diode connected between the gate and

MOSTRAR MÁS

Otros transistores... SM3413PSQG , SM4310PSK , SM4311PSKP , SM4331PSK , SM2613PSC , SM2617PSC , SM2621PSC , SM2691PSC , 8N60 , SM3335PSQG , SM3040CSU4 , SM6042CSU4 , SM1A40CSK , SM2001CSK , APM4500AK , APM2701AC , APM4568AK .

History: RJK6035DPP-E0 | 2SK1761 | APT20M18LVR | SM3413PSQG | FS10KM-12 | MCH5908

 

 

 

 

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