SM3335PSQA Todos los transistores

 

SM3335PSQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM3335PSQA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: DFN3X3A-8
 

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SM3335PSQA Datasheet (PDF)

 ..1. Size:251K  sino
 sm3335psqa.pdf pdf_icon

SM3335PSQA

SM3335PSQA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-39A,DDDDRDS(ON) = 14m (max.) @ VGS =-10VRDS(ON) = 24m (max.) @ VGS =-4.5VGS 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 3KVNote : The diode connected between the gate andsou

 5.1. Size:160K  sino
 sm3335psqg.pdf pdf_icon

SM3335PSQA

SM3335PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-39A,DDDDRDS(ON) = 14m(max.) @ VGS =-10VRDS(ON) = 24m(max.) @ VGS =-4.5VSG 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3D-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 3KVNote : The diode connected between the gate ands

 9.1. Size:163K  sino
 sm3331psqg.pdf pdf_icon

SM3335PSQA

SM3331PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-40A,DDDDRDS(ON) = 6.1m(max.) @ VGS =-10VRDS(ON) = 11m(max.) @ VGS =-4.5VG HBM ESD protection level pass 8KV SSS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )DDDD (RoHS Compliant)Note : The diode connected bet

 9.2. Size:166K  sino
 sm3337psqa.pdf pdf_icon

SM3335PSQA

SM3337PSQA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-32A,DDDDRDS(ON) = 19m(max.) @ VGS =-10VRDS(ON) = 32m(max.) @ VGS =-4.5VGS 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 2KVNote : The diode connected between the gate and

MOSTRAR MÁS

Otros transistores... SM3413PSQG , SM4310PSK , SM4311PSKP , SM4331PSK , SM2613PSC , SM2617PSC , SM2621PSC , SM2691PSC , K2611 , SM3335PSQG , SM3040CSU4 , SM6042CSU4 , SM1A40CSK , SM2001CSK , APM4500AK , APM2701AC , APM4568AK .

History: LNF7N65D | IPD60R400CE | AOD2610 | SUN0465F

 

 
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