APM2701AC Todos los transistores

 

APM2701AC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APM2701AC

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3(2) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065(0.12) Ohm

Encapsulados: SOT23-6

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APM2701AC datasheet

 ..1. Size:202K  sino
 apm2701ac.pdf pdf_icon

APM2701AC

APM2701AC Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, D2 S1 RDS(ON)=50m (typ.) @ VGS=4.5V D1 G2 RDS(ON)=65m (typ.) @ VGS=2.5V S2 G1 P-Channel -20V/-2A, Top View of SOT-23-6 RDS(ON)=90m (typ.) @ VGS=-4.5V (4)D2 RDS(ON)=130m (typ.) @ VGS=-2.5V (6)D1 Reliable and Rugged Lead Free and Green Devices Available (

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 apm2701ac.pdf pdf_icon

APM2701AC

APM2701AC www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at

 0.1. Size:925K  cn vbsemi
 apm2701acc-trg.pdf pdf_icon

APM2701AC

APM2701ACC-TRG www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.08

 7.1. Size:224K  tysemi
 apm2701cg.pdf pdf_icon

APM2701AC

SMD Type MOSFET SMD Type TrMOSFET SMDType SMDType SMDType r SMDType IC SMD Type IC SMD Type oIC SMD Type ansistICs Product specification KDS3601 Features 1.3 A, 100 V. RDS(ON) = 480m @VGS =10 V RDS(ON) = 530m @VGS =6V Low gate charge (3.7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Abs

MOSTRAR MÁS

Otros transistores... SM2691PSC , SM3335PSQA , SM3335PSQG , SM3040CSU4 , SM6042CSU4 , SM1A40CSK , SM2001CSK , APM4500AK , 7N60 , APM4568AK , APM9938K , SM1620CSCS , SM1A40CSQ , SM1A42CSK , SM2221CSQG , SM2222CSQG , SM2607CSC .

History: WMO18N50C4 | APM9988QB | NTD4965N | JCS4N60FB | 2SK1356 | WMM25N80M3 | WMM28N60F2

 

 

 

 

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