IRF7809 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7809
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 17.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1(min) V
Carga de la puerta (Qg): 66.7 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 900 pF
Resistencia entre drenaje y fuente RDS(on): 0.0075 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET IRF7809
IRF7809 Datasheet (PDF)
irf7809 irf7811.pdf
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irf7809av.pdf
PD-90010IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistan
irf7809a.pdf
PD - 93810PD - 93811IRF7809A/IRF7811AIRF7809A/IRF7811APROVISIONAL DATASHEET N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThese new devices emplo
irf7809avpbf.pdf
PD - 95212AIRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesAA Minimizes Parallel MOSFETs for high current1 8S Dapplications2 7 100% Tested for Rg S D Lead-Free3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achi
Otros transistores... IRF7555 , IRF7601 , IRF7603 , IRF7604 , IRF7606 , IRF7663 , IRF7805 , IRF7807 , IRF2807 , IRF7811 , IRF820 , IRF820A , IRF820AL , IRF820AS , IRF820FI , IRF820S , IRF821 .
