SM4603CSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM4603CSK
   Código: 4603
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.7(8.2) A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 8.1 nC
   Cossⓘ - Capacitancia de salida: 70(150) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021(0.024) Ohm
   Paquete / Cubierta: SOP8

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SM4603CSK Datasheet (PDF)

..1. Size:307K sino
sm4603csk.pdf

SM4603CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 N ChannelD1D2D230V/8.7A,RDS(ON) = 21m (max.) @ VGS = 10VS1RDS(ON) = 30m (max.) @ VGS = 4.5VG1S2 P ChannelG2-30V/-8.2A,Top View of SOP 8RDS(ON) = 24m (max.) @ VGS =-10V(8) (7)(6) (5)D1 D1RDS(ON) = 38m (max.) @ VGS =-4.5VD2 D2 100% UIS Tested Reliable and Rugged

9.1. Size:277K sino
sm4601csk.pdf

SM4601CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 N ChannelD1D2D230V/8A,RDS(ON) = 21m (max.) @ VGS = 10VS1RDS(ON) = 30m (max.) @ VGS = 4.5VG1S2 P ChannelG2-30V/-5A,Top View of SOP-8RDS(ON) = 53m (max.) @ VGS =-10V(8) (7)(6) (5)D1 D1RDS(ON) = 83m (max.) @ VGS =-4.5VD2 D2 100% UIS + Rg Tested Reliable and Rugged

9.2. Size:278K sino
sm4600csk.pdf

SM4600CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 N ChannelD1D2D230V/8.8A,RDS(ON) = 17m (max.) @ VGS = 10VS1RDS(ON) = 23m (max.) @ VGS = 4.5VG1S2 P ChannelG2-30V/-8.2A,Top View of SOP-8RDS(ON) = 20m (max.) @ VGS =-10V(8) (7)(6) (5)D1 D1RDS(ON) = 33m (max.) @ VGS =-4.5VD2 D2 100% UIS + Rg Tested Reliable and Ru

9.3. Size:361K huashuo
hsm4606.pdf

HSM4606 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM4606 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high 30V 22m 7A cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -30V 26m -6A converter applications. The HSM4606 meet the RoHS and Green Product requirement

9.4. Size:25275K cn sps
sm4606.pdf

SM4606P-Channel Enhancement-Mode MOSFETDescription SM4606N-channel P-channel Schematic diagram General Features N-ChannelMarking and pin assignment P-ChannelSOP-8 top view Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4606SR G D1 D2SM4606PR L SOP-8 S2 S1 G1 D1 D2G2 Tape ReelSM4606

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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