SM4603CSK Todos los transistores

 

SM4603CSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM4603CSK
   Código: 4603
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2.4 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 8.7(8.2) A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Conductancia de drenaje-sustrato (Cd): 70(150) pF
   Resistencia entre drenaje y fuente RDS(on): 0.021(0.024) Ohm
   Paquete / Cubierta: SOP8

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SM4603CSK Datasheet (PDF)

 ..1. Size:307K  sino
sm4603csk.pdf

SM4603CSK
SM4603CSK

SM4603CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 N ChannelD1D2D230V/8.7A,RDS(ON) = 21m (max.) @ VGS = 10VS1RDS(ON) = 30m (max.) @ VGS = 4.5VG1S2 P ChannelG2-30V/-8.2A,Top View of SOP 8RDS(ON) = 24m (max.) @ VGS =-10V(8) (7)(6) (5)D1 D1RDS(ON) = 38m (max.) @ VGS =-4.5VD2 D2 100% UIS Tested Reliable and Rugged

 9.1. Size:277K  sino
sm4601csk.pdf

SM4603CSK
SM4603CSK

SM4601CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 N ChannelD1D2D230V/8A,RDS(ON) = 21m (max.) @ VGS = 10VS1RDS(ON) = 30m (max.) @ VGS = 4.5VG1S2 P ChannelG2-30V/-5A,Top View of SOP-8RDS(ON) = 53m (max.) @ VGS =-10V(8) (7)(6) (5)D1 D1RDS(ON) = 83m (max.) @ VGS =-4.5VD2 D2 100% UIS + Rg Tested Reliable and Rugged

 9.2. Size:278K  sino
sm4600csk.pdf

SM4603CSK
SM4603CSK

SM4600CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 N ChannelD1D2D230V/8.8A,RDS(ON) = 17m (max.) @ VGS = 10VS1RDS(ON) = 23m (max.) @ VGS = 4.5VG1S2 P ChannelG2-30V/-8.2A,Top View of SOP-8RDS(ON) = 20m (max.) @ VGS =-10V(8) (7)(6) (5)D1 D1RDS(ON) = 33m (max.) @ VGS =-4.5VD2 D2 100% UIS + Rg Tested Reliable and Ru

 9.3. Size:361K  huashuo
hsm4606.pdf

SM4603CSK
SM4603CSK

HSM4606 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM4606 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high 30V 22m 7A cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -30V 26m -6A converter applications. The HSM4606 meet the RoHS and Green Product requirement

 9.4. Size:25275K  cn sps
sm4606.pdf

SM4603CSK
SM4603CSK

SM4606P-Channel Enhancement-Mode MOSFETDescription SM4606N-channel P-channel Schematic diagram General Features N-ChannelMarking and pin assignment P-ChannelSOP-8 top view Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4606SR G D1 D2SM4606PR L SOP-8 S2 S1 G1 D1 D2G2 Tape ReelSM4606

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