SM4901CSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM4901CSK
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.08 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8(7) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 72(142) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022(0.028) Ohm
Paquete / Cubierta: SOP8
- Selección de transistores por parámetros
SM4901CSK Datasheet (PDF)
sm4901csk.pdf

SM4901CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D230V/8A,D2RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 30m (max.) @ VGS = 4.5VS1G1 P ChannelS2G2-30V/-7A,Top View of SOP-8RDS(ON) = 28m (max.) @ VGS =-10VRDS(ON) = 44m (max.) @ VGS =-4.5V(8) (7)(6) (5)D1 D1 100% UIS Tested D2 D2 Reliable and
gsm4906.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm4900w.pdf

GSM4900W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=140m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLP042N10G-P | FQA5N90
History: BLP042N10G-P | FQA5N90



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2sa771 | d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614