SM4901CSK Datasheet and Replacement. Cross Reference Search

SM4901CSK Datasheet (PDF)

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SM4901CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D230V/8A,D2RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 30m (max.) @ VGS = 4.5VS1G1 P ChannelS2G2-30V/-7A,Top View of SOP-8RDS(ON) = 28m (max.) @ VGS =-10VRDS(ON) = 44m (max.) @ VGS =-4.5V(8) (7)(6) (5)D1 D1 100% UIS Tested D2 D2 Reliable and

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40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

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GSM4900W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=140m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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