SM4901CSK Datasheet and Replacement
Type Designator: SM4901CSK
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8(7) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 72(142) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022(0.028) Ohm
Package: SOP8
SM4901CSK substitution
SM4901CSK Datasheet (PDF)
sm4901csk.pdf

SM4901CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D230V/8A,D2RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 30m (max.) @ VGS = 4.5VS1G1 P ChannelS2G2-30V/-7A,Top View of SOP-8RDS(ON) = 28m (max.) @ VGS =-10VRDS(ON) = 44m (max.) @ VGS =-4.5V(8) (7)(6) (5)D1 D1 100% UIS Tested D2 D2 Reliable and
gsm4906.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm4900w.pdf

GSM4900W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=140m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Datasheet: SM4066CSU4 , SM4600CSK , SM4601CSK , SM8401CSQ , SM8403CSQ , SM8404CSQ , SM8404CSQA , SM4603CSK , IRF840 , SM6041CSK , SM6043CSQ , SM7308CSKP , RFL1N08 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 .
History: BLM6G10-30G | 2SK222
Keywords - SM4901CSK MOSFET datasheet
SM4901CSK cross reference
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History: BLM6G10-30G | 2SK222



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