RFP2N18L Todos los transistores

 ..1. Size:87K  njs
 rfl1n18l rfl1n20l rfp2n18l rfp2n20l.pdf

 8.1. Size:87K  njs
 rfp2n08 rfp2n10.pdf

 8.2. Size:40K  intersil
 rfp2n08l rfp2n10l.pdf

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, Features N-Channel Power MOSFETs 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050 mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drives designed for use with logic level (5V) driving sources i

 9.1. Size:342K  fairchild semi
 rfp2n20l.pdf

RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, Features N-Channel Power MOSFET 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistor is specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, autom

 9.2. Size:40K  intersil
 rfp2n20.pdf

RFP2N20 Data Sheet July 1999 File Number 2881.2 2A, 200V, 3.500 Ohm, N-Channel Power Features MOSFET 2A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistors designed for applications such Symbol as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching D transi