AP9916H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9916H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 18 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 98 nS
Cossⓘ - Capacitancia de salida: 258 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP9916H MOSFET
- Selecciónⓘ de transistores por parámetros
AP9916H datasheet
ap9916h-j.pdf
AP9916H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 18V D Capable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A G Single Drive Requirement S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with th
ap9916gh ap9916gj.pdf
AP9916GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 18V D Capable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A G Surface mount package S Description G The Advanced Power MOSFETs from APEC provide the D S TO-25
ap9918h ap9918j.pdf
AP9918H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A G Surface mount package S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the b
ap9915h ap9915j.pdf
AP9915H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A G Single Drive Requirement S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with th
Otros transistores... RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , AON6414A , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 , 2SK1202 , IPD06N03LA .
History: 2SK3121 | AO3451 | CS24N40FA9H
History: 2SK3121 | AO3451 | CS24N40FA9H
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
tip35 datasheet | tip36c datasheet | 2sc461 | hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606